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METHOD FOR EVALUATING ATOMIC VACANCY IN SURFACE LAYER OF SILICON WAFER AND APPARATUS FOR EVALUATING THE SAME

  • US 20160258908A1
  • Filed: 11/05/2014
  • Published: 09/08/2016
  • Est. Priority Date: 11/08/2013
  • Status: Abandoned Application
First Claim
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1. A method for evaluating atomic vacancy in a surface layer of a silicon wafer, comprising the steps of:

  • forming a pair of surface acoustic wave (SAW) devices which are arranged opposite to one another on the same main surface of a silicon sample;

    generating an ultrasonic wave pulse by one of the surface acoustic wave (SAW) devices and propagating the ultrasonic wave in a surface layer of the silicon sample while the silicon sample is cooled under a condition of an application of magnetic field, and receiving the propagated ultrasonic wave pulse at the other of the surface acoustic wave (SAW) devices, thereby measuring a difference in phase between the injected ultrasonic wave pulse and the propagated ultrasonic wave pulse; and

    calculating an elastic constant Cs of the surface layer of the silicon sample based on the difference in phase and evaluating a concentration “

    N”

    of atomic vacancy of the surface layer of the silicon sample based on a change of the elastic constant Cs with a temperature or a change of the elastic constant Cs with an intensity of the magnetic field.

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