SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a semiconductor layer in which a trench having a side surface and a bottom surface is formed;
a second conductivity type layer formed in the semiconductor layer on the side surface and the bottom surface of the trench;
a first conductivity type layer formed in the semiconductor layer so as to be contiguous to the second conductivity type layer;
a first electrode electrically connected to the first conductivity type layer;
a second electrode that is embedded in the trench and that is electrically connected to the second conductivity type layer; and
a barrier-forming layer that is disposed between the side surface of the trench and the second electrode and that forms a potential barrier between the barrier-forming layer and the second conductivity type layer higher than a potential barrier between the second conductivity type layer and the second electrode.
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Accused Products
Abstract
The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode.
12 Citations
12 Claims
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1. A semiconductor device comprising:
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a semiconductor layer in which a trench having a side surface and a bottom surface is formed; a second conductivity type layer formed in the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity type layer formed in the semiconductor layer so as to be contiguous to the second conductivity type layer; a first electrode electrically connected to the first conductivity type layer; a second electrode that is embedded in the trench and that is electrically connected to the second conductivity type layer; and a barrier-forming layer that is disposed between the side surface of the trench and the second electrode and that forms a potential barrier between the barrier-forming layer and the second conductivity type layer higher than a potential barrier between the second conductivity type layer and the second electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a semiconductor layer in which a taper trench having a side surface and a bottom surface is formed, the side surface being inclined with respect to the bottom surface at an obtuse angle; a second conductivity type layer formed in the semiconductor layer on the side surface and the bottom surface of the taper trench, the second conductivity type layer becoming thicker in a lateral direction along a surface of the semiconductor layer from the side surface corresponding to an inclination of the side surface of the taper trench; a first conductivity type layer formed in the semiconductor layer so as to be contiguous to the second conductivity type layer; a first electrode electrically connected to the first conductivity type layer; and a second electrode that is embedded in the taper trench and that is electrically connected to the second conductivity type layer. - View Dependent Claims (7, 8, 9, 10, 11)
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12-27. -27. (canceled)
Specification