SEMICONDUCTOR MEMORY DEVICE
First Claim
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1. A semiconductor memory device comprising:
- a first memory cell array electrically connected to a set of first bit lines;
a second memory cell array electrically connected to a set of second bit lines; and
a sense amplifier module that is physically located between the first and second memory cell arrays, and shared by the first and second memory cell arrays.
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Abstract
A semiconductor memory device includes a first memory cell array electrically connected to a set of first bit lines, a second memory cell array electrically connected to a set of second bit lines, and a sense amplifier module that is physically located between the first and second memory cell arrays, and shared by the first and second memory cell arrays.
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Citations
20 Claims
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1. A semiconductor memory device comprising:
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a first memory cell array electrically connected to a set of first bit lines; a second memory cell array electrically connected to a set of second bit lines; and a sense amplifier module that is physically located between the first and second memory cell arrays, and shared by the first and second memory cell arrays. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor memory device comprising:
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first and second memory cell arrays formed on a substrate; and sense amplifier units for the first and second memory cell arrays formed on the substrate between the first and second memory cell arrays. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification