METHOD AND APPARATUS FOR THE DETECTION OF ARC EVENTS DURING THE PLASMA PROCESSING OF A WAFER, SURFACE OF SUBSTRATE

• US 20160268108A1
• Filed: 08/12/2010
• Published: 09/15/2016
• Est. Priority Date: 08/17/2009
• Status: Active Grant

• Current Assignee: Verity Instruments Incorporated
• Original Assignee: Verity Instruments Incorporated
• Inventors: DANIELS, Stephen, Glynn, Shane, Soberon, Felipe, Maguire, Paul
• Granted Patent: US 9,842,726 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32944 Arc detection
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Abstract

A method for monitoring at least one process parameter of a plasma process being performed on a semiconductor wafer, surface or surface and determine arc events occurring within the plasma tool chamber. The method comprises the steps of detecting the modulated light being generated from the plasma sheath during the plasma process; sampling RF voltage and current signals from the RF transmission line; processing the detected modulated light and the RF signals to produce at least one monitor statistic for the plasma process, and process the monitor signal to determine the occurrence of arcing events during the wafer processing.

Claims

1. A method for detecting an arc event occurring during plasma processing of a surface being performed in a plasma chamber which is being supplied by a radio frequency power source, the method comprising the steps of:

detecting light being generated from the plasma during the process; and

processing the detected light to determine when an arc event occurs.

2. The method of claim 1 wherein the step of detecting light being generated from the plasma comprises detecting modulated light being emitted from the plasma sheath and the volume of plasma close to the plasma sheath.

3. The method of claim 2 further comprising the step of:

detecting an additional process parameter of the plasma process; and

processing both the detected modulated light and the additional process parameter to determine when the arc event occurs.

4. The method of claim 3, wherein the additional process parameter comprises radio

frequency signals associated with the radio frequency power source.

5. The method of claim 4, wherein the step of processing the detected modulated light and the radio frequency signals comprises the steps of:

converting the detected modulated light into a digital optical waveform and the detected radio frequency signals into a digital radio frequency waveform;

transforming the digital optical waveform and the digital radio frequency waveform from the time domain into the frequency domain;

processing the transformed optical and radio frequency waveforms to generate magnitude and relative phase data;

extracting the generated magnitude or relative phase data of one or more signals from the optical and radio frequency waveforms which correspond to those preselected to be process monitor statistics; and

detecting when the value of at least one of the one or more process monitor statistics is outside a predetermined upper and lower limit value, the detection signifying the occurrence of an arc event.

6. The method of claim 5, wherein the step of processing the transformed optical and radio frequency waveforms to generate magnitude and relative phase data comprises the steps of:

calculating for each of the optical and radio frequency waveforms the square root of the sum of the squares of the corresponding real and imaginary coefficents for each frequency of the transformed waveform to determine the magnitude data; and

calculating the difference between the phase of the transformed optical waveform and the phase of the transformed radio frequency waveform to determine the relative phase data

7. The method of claim 5, further comprising the step of amplifying the detected modulated light and the radio frequency signals prior to converting the detected modulated light into a digital optical waveform and the detected radio frequency signals into a digital radio frequency waveform.

8. The method of claim 5, wherein the step of transforming the optical and radio frequency waveforms from the time domain to the frequency domain is performed by means of a numerical processing technique.

9. The method of claim 8, wherein the numerical processing technique comprises the fast fourier transform.

10. The method of claim 5, further comprising the step of generating an indicator when the value of at least one of the one or more process monitor statistics is detected to be outside the predetermined upper and lower limit value.

11. The method of claim 10, wherein the indicator is a visual or an aural indicator or a control signal for the plasma processing to stop.

12. The method of claim 4, wherein the radio frequency signals are proportional to or representative of the current and voltage through the transmission line connecting the radio frequency power source to the plasma chamber.

13. The method of any of the previous claims, further comprising the step of filtering the light generated from the plasma to specific wavelengths and wherein the step of detecting comprises the step of detecting only the filtered light.

14. The method of claim 5, wherein the one or more one or more preselected process monitor statistics are determined by performing a test wafer analysis of a plurality of wafers in the plasma chamber.

15. The method of claim 14, wherein the test wafer analysis comprises the steps of:

for each test wafer;

detecting light being generated from the plasma of the test wafer during a plasma process and detecting the radio frequency signals associated with the radio frequency power source of the process;

converting selected frequencies of the detected light into a digital optical waveform and selected frequencies of the detected radio frequency signals into a digital radio frequency waveform;

and further comprising the steps of;

calculating an average optical waveform over time for each frequency from the plurality of optical waveforms from each test wafer and an average radio frequency waveform over time for each frequency from the plurality of digital radio frequency waveforms from each test wafer;

selecting one or more signals from among the plurality of optical and radio frequency waveforms which exhibit the largest deviation from the calculated average waveforms; and

generating one or more process monitor statistics by applying a mathematical function to the selected one or more signals.

16. The method of claim 15 wherein the process monitor statistic is selected to be the optical magnitude of the radio frequency driving frequency.

17. The method of claim 15 wherein the process monitor statistic is selected to be the relative phase of the second harmonic of the radio frequency driving frequency.

18. The method of claim 15 further comprising the step of:

calculating an average for the selected process monitor statistic; and

setting for each point in time a value corresponding to 10% above the calculated average process monitor statistic as the upper limit value and setting for each point in time a value corresponding to 10% below the calculated average for process monitor statistic as the lower limit value.

19. The method of claim 18 wherein the values of the upper and the lower limits are dynamically updatable.

20. The method of claim 15 where the one or more one or more predefined process monitor statistics are user defined.

21. An apparatus for detecting an arc event occurring during plasma processing of a surface being performed in a plasma chamber which is being supplied by a radio frequency power source, the apparatus comprising:

means for detecting light being generated from the plasma during the process; and

means for processing the detected light to determine when an arc event occurs.

22. The apparatus of claim 21 wherein the means for detecting light being generated from the plasma further comprises means for detecting modulated light being emitted from the plasma sheath and the volume of plasma close to the plasma sheath.

23. The apparatus of claim 22 further comprising:

means for detecting an additional process parameter of the plasma process; and

means for processing both the detected modulated light and the additional process parameter to determine when the arc event occurs.

24. The apparatus of claim 23, wherein the additional process parameter comprises radio frequency signals associated with the radio frequency power source.

25. The apparatus of claim 24, wherein the means for processing the detected modulated light and the radio frequency signals further comprises:

means for converting the detected modulated light into a digital optical waveform and the detected radio frequency signals into a digital radio frequency waveform;

means for transforming the digital optical waveform and the digital radio frequency waveform from the time domain into the frequency domain;

means for processing the transformed optical and radio frequency waveforms to generate magnitude and relative phase data;

means for extracting the generated magnitude or relative phase data of one or more signals from the optical and radio frequency waveforms which have been preselected to be process monitor statistics; and

means for detecting when the value of at least one of the one or more process monitor statistics is outside a predetermined range, the detection signifying the occurrence of an arc event.

26. The apparatus of claim 25, wherein the means for processing the transformed optical and radio frequency waveforms to generate magnitude and relative phase data further comprises:

means for calculating for each of the optical and radio frequency waveforms the square root of the sum of the squares of the corresponding real and imaginary coefficients for each frequency of the transformed waveform to determine the magnitude data; and

means for calculating the difference between the phase of the transformed optical waveform and the phase of the transformed radio frequency waveform to determine the relative phase data.

27. The apparatus of claim 25, further comprising means for amplifying the detected modulated light and the radio frequency signals prior to the means for converting the detected modulated light into a digital optical waveform and the detected radio frequency signals into a digital radio frequency waveform.

28. The apparatus of claim 25, further comprising means for generating an indicator when the value of at least one of the one or more process monitor statistics is detected to be outside a predetermined upper and lower limit value.

29. The apparatus of any of claims 21 to 28, further comprising means for filtering the light generated from the plasma to specific wavelengths and wherein the means for detecting comprises means of detecting only the filtered light.