SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
First Claim
1. A semiconductor memory device comprising:
- a stacked body including a plurality of electrode layers, an insulator being interposed between the electrode layers; and
a column extending in a stacking direction in the stacked body;
the column includinga semiconductor channel extending in the stacking direction, the semiconductor channel being a polycrystalline, an average grain size of crystals in the polycrystalline being not less than a film thickness of the semiconductor channel,a charge storage film provided between the semiconductor channel and the electrode layers, anda doped silicon layer containing a metal element and an impurity other than a metal element, the doped silicon layer being in contact with a top end of the semiconductor channel.
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Accused Products
Abstract
According to one embodiment, a semiconductor memory device includes a stacked body and a column. The stacked body includes a plurality of electrode layers. The column includes a semiconductor channel, a charge storage film, and a doped silicon layer. The semiconductor channel extends in the stacking direction. The semiconductor channel is a polycrystalline. An average grain size of crystals in a polycrystalline is not less than a film thickness of the semiconductor channel. The charge storage film is provided between the semiconductor channel and the electrode layers. The doped silicon layer contains a metal element and an impurity other than a metal element. The doped silicon layer is in contact with a top end of the semiconductor channel.
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Citations
18 Claims
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1. A semiconductor memory device comprising:
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a stacked body including a plurality of electrode layers, an insulator being interposed between the electrode layers; and a column extending in a stacking direction in the stacked body; the column including a semiconductor channel extending in the stacking direction, the semiconductor channel being a polycrystalline, an average grain size of crystals in the polycrystalline being not less than a film thickness of the semiconductor channel, a charge storage film provided between the semiconductor channel and the electrode layers, and a doped silicon layer containing a metal element and an impurity other than a metal element, the doped silicon layer being in contact with a top end of the semiconductor channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor memory device, comprising:
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forming a stacked body on a substrate, the stacked body including a plurality of first layers and a plurality of second layers, the second layers being provided between the first layers; forming a hole penetrating through the stacked body and extending in a stacking direction of the stacked body; forming a film including a charge storage film on an inner wall of the hole; forming an amorphous semiconductor film on an inner wall of the film including the charge storage film; forming a metal silicide film on a top end of the amorphous semiconductor film; forming a semiconductor channel by single crystallizing or polycrystallizing the amorphous semiconductor film, an average grain size of crystals in the polycrystallized semiconductor channel being not less than a film thickness of the semiconductor channel; forming a doped silicon layer containing an impurity on the metal silicide film; and absorbing a metal element into the doped silicon layer, the metal element being diffused in the semiconductor channel in the MILC process. - View Dependent Claims (15, 16, 17, 18)
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Specification