SEMICONDUCTOR STRUCTURE INCLUDING BACKGATE REGIONS AND METHOD FOR THE FORMATION THEREOF

• US 20160268424A1
• Filed: 03/10/2015
• Published: 09/15/2016
• Est. Priority Date: 03/10/2015
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Morgan, John
• Granted Patent: US 9,583,616 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/823871 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 21/823878 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 21/823892 with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/7831 with multiple gate structure FinFETs or MuGFETs H01L29/7855, thin film transistors H01L29/78645
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors

Abstract

A semiconductor structure includes a semiconductor substrate, a plurality of transistors and an electrically insulating layer provided between the substrate and the plurality of transistors, and a trench isolation structure including a portion between a first and a second island of the semiconductor structure and extending into the substrate to a first depth. The substrate includes a bottom region having a first type of doping and extending at least to a second depth greater than the first depth, and a deep well region having a second type of doping and extending to a third depth greater than the first depth and smaller than the second depth. Each of the first and second islands includes a first backgate region having the first type of doping and being continuous with the bottom region and a second backgate region having the second type of doping and being continuous with the deep well region.

Claims

1. A semiconductor structure, comprising:

a semiconductor substrate, a plurality of transistors and an electrically insulating layer provided between said substrate and said plurality of transistors;

a first trench isolation structure comprising a portion between a first and a second island of said semiconductor structure and extending into said substrate to a first depth;

said substrate comprising a bottom region having a first type of doping and extending at least to a second depth greater than said first depth and a deep well region having a second type of doping and extending to a third depth greater than said first depth and smaller than said second depth; and

each of said first island and said second island comprising a first backgate region disposed above said bottom region, having said first type of doping, and being continuous with said bottom region and a second backgate region disposed above said deep well region, having said second type of doping, and being continuous with said deep well region, said first and second backgate regions being provided in said substrate.

2. The semiconductor structure of claim 1, further comprising:

a bottom region contact providing an electrical connection to said bottom region; and

a deep well region contact providing an electrical connection to said deep well region.

3. The semiconductor structure of claim 2, wherein said bottom region comprises a first portion provided at said first island and a second portion provided at said second island, said first portion and said second portion being continuous with each other.

4. The semiconductor structure of claim 3, wherein said bottom region contact is a common bottom region contact providing an electrical connection to said first portion of said bottom region and to said second portion of said bottom region.

5. The semiconductor structure of claim 2, wherein said deep well region comprises a first portion provided at said first island and a second portion provided at said second island, said first portion and said second portion of said deep well region being continuous with each other.

6. The semiconductor structure of claim 5, wherein said deep well region contact is a common deep well region contact providing an electrical connection to said first portion and said second portion of said deep well region.

7. The semiconductor structure of claim 6, wherein, for at least one of said first island and said second island, an extension of the portion of said deep well region provided at the respective island in at least one horizontal direction is greater than an extension of said second backgate region in the respective one of said first island and said second island in said at least one horizontal direction, wherein each of said at least one horizontal direction is perpendicular to a thickness direction of said substrate.

8. The semiconductor structure of claim 2, wherein said first trench isolation structure comprises a portion arranged between said bottom region contact and at least one of said first island and said second island.

9. The semiconductor structure of claim 8, wherein said first trench isolation structure comprises a portion arranged between said deep well region contact and at least one of said first island, said second island and said deep well region contact.

10. The semiconductor structure of claim 1, wherein said plurality of transistors comprises:

a plurality of N-channel field effect transistors provided in said first island, wherein a first subset of said plurality of N-channel field effect transistors is provided over said first backgate region of said first island and a second subset of said plurality of N-channel field effect transistors is provided over said second backgate region of said first island; and

a plurality of P-channel field effect transistors provided in said second island, wherein a first subset of said plurality of P-channel transistors is provided over said first backgate region of said second island and a second subset of said plurality of P-channel transistors is provided over said second backgate region of said second island.

11. The semiconductor structure of claim 10, wherein:

said first type of doping is a P-type doping;

said second type of doping is an N-type doping;

said first subset of said plurality of N-channel field effect transistors comprises high threshold voltage N-channel field effect transistors;

said second subset of said plurality of N-channel field effect transistors comprises at least one of regular threshold voltage N-channel field effect transistors and low threshold voltage N-channel field effect transistors;

said first subset of said plurality of P-channel field effect transistors comprises at least one of regular threshold voltage P-channel field effect transistors and low threshold voltage N-channel field effect transistors; and

said second subset of said plurality of P-channel field effect transistors comprises high threshold voltage P-channel field effect transistors.

12. The semiconductor structure of claim 1, further comprising a circuit for applying a mass potential to said bottom region contact and for applying a positive voltage to said deep well region contact.

13. The semiconductor structure of claim 1, further comprising a second trench isolation structure providing electrical insulation between transistors of said plurality of transistors that are provided in a same island, said second trench isolation structure being smaller than said first trench isolation structure.

14-21. -21. (canceled)

22. A semiconductor structure, comprising:

a semiconductor substrate, a plurality of transistors and an electrically insulating layer provided between said substrate and said plurality of transistors;

a first trench isolation structure comprising a portion between a first and a second island of said semiconductor structure and extending into said substrate to a first depth;

said substrate comprising a bottom region having a first type of doping and extending at least to a second depth greater than said first depth and a deep well region having a second type of doping and extending to a third depth greater than said first depth and smaller than said second depth; and

each of said first island and said second island comprising a first backgate region having said first type of doping and being continuous with said bottom region and a second backgate region having said second type of doping and being continuous with said deep well region, said first and second backgate regions being provided in said substrate, wherein, for at least one of said first island and said second island, an extension of the portion of said deep well region provided at the respective island in at least one horizontal direction is greater than an extension of said second backgate region in the respective one of said first island and said second island in said at least one horizontal direction, wherein each of said at least one horizontal direction is perpendicular to a thickness direction of said substrate.

23. The semiconductor structure of claim 22, further comprising:

a bottom region contact providing an electrical connection to said bottom region; and

a deep well region contact providing an electrical connection to said deep well region.

24. The semiconductor structure of claim 23, wherein said bottom region comprises a first portion provided at said first island and a second portion provided at said second island, said first portion and said second portion being continuous with each other and said bottom region contact is a common bottom region contact providing an electrical connection to said first portion of said bottom region and to said second portion of said bottom region.

25. The semiconductor structure of claim 23, wherein said deep well region comprises a first portion provided at said first island and a second portion provided at said second island, said first portion and said second portion of said deep well region being continuous with each other, and said deep well region contact is a common deep well region contact providing an electrical connection to said first portion and said second portion of said deep well region.

26. The semiconductor structure of claim 22, wherein said first trench isolation structure comprises a portion arranged between said bottom region contact and at least one of said first island and said second island.

27. The semiconductor structure of claim 22, wherein said first trench isolation structure comprises a portion arranged between said deep well region contact and at least one of said first island, said second island and said deep well region contact.

28. The semiconductor structure of claim 22, wherein said plurality of transistors comprises:

a plurality of N-channel field effect transistors provided in said first island, wherein a first subset of said plurality of N-channel field effect transistors is provided over said first backgate region of said first island and a second subset of said plurality of N-channel field effect transistors is provided over said second backgate region of said first island; and

a plurality of P-channel field effect transistors provided in said second island, wherein a first subset of said plurality of P-channel transistors is provided over said first backgate region of said second island and a second subset of said plurality of P-channel transistors is provided over said second backgate region of said second island.

29. The semiconductor structure of claim 22, further comprising a second trench isolation structure providing electrical insulation between transistors of said plurality of transistors that are provided in a same island, said second trench isolation structure being smaller than said first trench isolation structure.