SINGLE CRYSTALLINE CZTSSe PHOTOVOLTAIC DEVICE

• US 20160268460A1
• Filed: 03/12/2015
• Published: 09/15/2016
• Est. Priority Date: 03/12/2015
• Status: Abandoned Application

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Kim, Jeehwan, Lee, Yun Seog, Gershon, Talia S.
• Application Number:
  US14/656,287
• Publication Number:
  US 20160268460A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 31/0326 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

A method for fabricating a photovoltaic device includes forming a two dimensional material on a first monocrystalline substrate. A single crystal absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first monocrystalline substrate. The single crystal absorber layer is exfoliated from the two dimensional material. The single crystal absorber layer is transferred to a second substrate, and the single crystal absorber layer is placed on a conductive layer formed on the second substrate. Additional layers are formed on the single crystal absorber layer to complete the photovoltaic device.

Claims

1-14. -14. (canceled)

15. A photovoltaic device, comprising:

a first contact layer formed on a first substrate;

a single crystal absorber layer including Cu—

Zn—

Sn—

S(Se) (CZTSSe) placed directly on the first contact layer;

a buffer layer formed in contact with the single crystal absorber layer; and

a transparent conductive contact layer formed over the buffer layer formed on the single crystal absorber layer.

16. The device as recited in claim 15, wherein the CZTSSe includes Cu₂₋

xZn_1+ySn(S<sub>1−

z</sub> Se_z)_4+q wherein 0≦

x≦

1;

0≦

y≦

1;

0≦

z≦

1;

−

1≦

q≦

1.

17. The device as recited in claim 15, wherein the buffer layer includes a material from one of group IV, III-V, II-VI and I-III-VI₂.

18. The device as recited in claim 15, wherein the buffer layer includes at least one of GaAs, Cu—

In—

Ga—

S,Se (CIGSSe), CdTe, CdS, Ge, ZnS, Zn(O,S), In₂S₃ or ZnO.

19. The device as recited in claim 15, wherein the buffer layer includes two or more layers.

20. The device as recited in claim 15, wherein the CZTSSe includes Ge replacing some or all of the Sn.

21. The device as recited in claim 15, wherein the buffer layer includes a single crystal semiconductor layer.

22. The device as recited in claim 15, wherein the buffer layer includes an amorphous material.

23. The device as recited in claim 15, wherein the first contact layer includes an amorphous material.

24. The device as recited in claim 15, wherein the first contact layer includes molybdenum.

25. The device as recited in claim 15, wherein the first contact layer includes gold.

26. The device as recited in claim 15, wherein the single crystal absorber layer includes a Kesterite structure having a (112) single crystal orientation.