PULSED PLASMA FOR FILM DEPOSITION
First Claim
1. A method of processing a substrate disposed in a processing chamber, comprising:
- (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and
(b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source, wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.
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Accused Products
Abstract
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.
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Citations
20 Claims
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1. A method of processing a substrate disposed in a processing chamber, comprising:
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(a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source, wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of depositing a material on a substrate disposed atop a substrate support pedestal in a process chamber, comprising:
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(a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source;
wherein the remote plasma source is pulsed for a first interval and the second plasma source is pulsed for a second interval concurrent with the first interval; and(c) repeating (a) and (b) until a predetermined thickness of the material is deposited and treated on the substrate, wherein a temperature of the substrate support pedestal during (a)-(c) is controlled from about −
150 degrees Celsius to about 500 degrees Celsius.
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20. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method for processing a substrate disposed atop a substrate support pedestal in a processing chamber to be performed, the method comprising:
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(a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source;
wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating; and(c) repeating (a) and (b) until a predetermined thickness of the material is deposited and treated on the substrate, wherein a temperature of the substrate support pedestal during (a)-(c) is controlled from about −
150 degrees Celsius to about 500 degrees Celsius.
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Specification