HIGH THERMAL BUDGET MAGNETIC MEMORY

• US 20160276407A1
• Filed: 03/15/2016
• Published: 09/22/2016
• Est. Priority Date: 03/16/2015
• Status: Active Grant

• Current Assignee: Globalfoundries Singapore Pte Limited (GlobalFoundries, Inc.)
• Original Assignee: Globalfoundries Singapore Pte Limited (GlobalFoundries, Inc.)
• Inventors: NAIK, Vinayak Bharat, LEE, Kangho, TAHMASEBI, Taiebeh, WANG, Chenchen Jacob
• Granted Patent: US 9,666,640 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01L 29/66568 Lateral single gate silicon transistors
• CPC Class Codes: H01L 29/66575 where the source and drain or source and drain extensions are self-aligned to the sides of the gate H01L29/66606 takes precedence
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

Semiconductor devices and methods for forming a semiconductor device are disclosed. The method includes forming a storage unit of a magnetic memory cell. A bottom electrode and a fixed layer are formed. The fixed layer includes a composite spacer layer disposed on the bottom electrode. The composite spacer layer includes a base layer and an amorphous buffer layer disposed over the base layer. A reference layer is disposed on the composite spacer layer. The amorphous buffer layer serves as a template for the reference layer to have a desired crystalline structure in a desired orientation. At least one tunneling barrier layer is formed over the fixed layer. A storage layer is formed over the tunneling barrier layer and a top electrode is formed over the storage layer.

Claims

1. A method of forming a memory cell comprising:

forming a select unit on a substrate, wherein the select unit comprises a transistor having

a first source/drain (S/D) region,

a second S/D region, and

a gate between the first and second S/D regions;

forming a dielectric layer on the substrate covering the select unit, wherein the dielectric layer includes storage pad coupled to the first S/D region;

forming a storage unit on the storage pad, wherein forming the storage unit comprises

forming a bottom electrode,

forming a fixed layer on the bottom electrode, wherein the fixed layer comprises

a composite spacer layer disposed on the bottom electrode, wherein the composite spacer layer comprises

a base layer, and

an amorphous buffer layer disposed over the base layer, and

a reference layer on the composite spacer layer, wherein the amorphous buffer layer serves as a template for the reference layer to have a desired crystalline structure in a desired orientation,

forming at least one tunneling barrier layer over the fixed layer,

forming a storage layer over the tunneling barrier layer, and

forming a top electrode over the storage layer; and

forming a bitline coupled to the top electrode layer.

2. The method of claim 1 wherein:

the fixed layer further comprises a hard layer disposed on the bottom electrode;

the base layer is disposed on the hard layer and the base layer comprises Mo; and

the

amorphous buffer layer disposed over the base layer is a metal layer (M), forming a composite spacer layer Mo/M and the amorphous buffer layer serves as a template for the reference layer to have a body-centered cubic (BCC) crystalline structure in the (001) orientation.

3. The method of claim 2 wherein the metal layer comprises a metal material that serves as a template for the reference layer to have high tunnel magnetoresistance (TMR).

4. The method of claim 3 wherein the metal layer M comprises Ta, V, FeV, TaN or MoN.

5. The method of claim 2 wherein the hard layer comprises Co/Pt bilayer and the reference layer comprises CoFeB layer.

6. The method of claim 2 wherein forming the composite spacer layer further comprises forming a coupling layer (C) in between the base layer and buffer layer, wherein the coupling layer provides strong coupling between the hard layer and the reference layer.

7. The method of claim 6 wherein the amorphous buffer layer disposed over the base layer is a metal layer (M), forming a composite spacer layer Mo/C/M.

8. The method of claim 7 wherein the coupling layer is a magnetic layer which is ferromagnetically weak which acts as a paramagnetic layer to promote strong magnetic coupling between the hard layer and the reference layer.

9. The method of claim 8 wherein the magnetic layer of the coupling layer includes Co, Fe or Ni.

10. The method of claim 6 wherein the hard layer comprises Co/Pt bilayer and the reference layer comprises CoFeB layer.

11. The method of claim 1 wherein the tunneling barrier layer comprises first and second tunneling barrier layers and wherein the storage layer is formed in between the first and second tunneling barrier layers.

12. A method of forming a storage unit of a magnetic memory cell comprising:

forming a bottom electrode;

forming a fixed layer on the bottom electrode, wherein the fixed layer comprises

a composite spacer layer disposed on the bottom electrode, wherein the composite spacer layer comprises

a base layer, and

an amorphous buffer layer disposed over the base layer, and

a reference layer on the composite spacer layer, wherein the amorphous buffer layer serves as a template for the reference layer to have a desired crystalline structure in a desired orientation;

forming at least one tunneling barrier layer over the fixed layer;

forming a storage layer over the tunneling barrier layer; and

forming a top electrode over the storage layer.

13. The method of claim 12 wherein:

the fixed layer further comprises a hard layer; and

the composite spacer layer is disposed on the hard layer and serves as a diffusion barrier between the reference and hard layers.

14. The method of claim 12 wherein:

the base layer comprises Mo; and

the amorphous buffer layer disposed over the base layer is a metal layer (M), forming a composite spacer layer Mo/M and the amorphous buffer layer serves as a template for the reference layer to have a body-centered cubic (BCC) crystalline structure in the (001) orientation.

15. The method of claim 14 wherein the metal layer comprises a metal material that serves as a template for the reference layer to have high tunnel magnetoresistance (TMR).

16. The method of claim 13 wherein forming the composite spacer layer further comprises forming a coupling layer between the base layer and buffer layer, wherein the coupling layer provides strong coupling between the hard layer and the reference layer.

17. The method of claim 16 wherein the coupling layer is a magnetic layer which is ferromagnetically weak which acts as a paramagnetic layer to promote strong magnetic coupling between the hard layer and the reference layer.

18. A storage unit of a magnetic memory cell comprising:

a bottom electrode;

a fixed layer disposed on the bottom electrode, wherein the fixed layer comprises

a composite spacer layer disposed on the bottom electrode, wherein the composite spacer layer comprises

a base layer, and

an amorphous buffer layer disposed over the base layer, and

a reference layer on the composite spacer layer, wherein the amorphous buffer layer serves as a template for the reference layer to have a desired crystalline structure in a desired orientation;

at least one tunneling barrier layer disposed over the fixed layer;

a storage layer disposed over the tunneling barrier layer; and

a top electrode disposed over the storage layer.

19. The storage unit of claim 18 wherein:

the fixed layer further comprises a hard layer;

the base layer is disposed on the hard layer and the base layer comprises Mo; and

the amorphous buffer layer disposed over the base layer is a metal layer (M), forming a composite spacer layer Mo/M and the amorphous buffer layer serves as a template for the reference layer to have a body-centered cubic (BCC) crystalline structure in the (001) orientation.

20. The storage unit of claim 19 wherein the composite spacer layer further comprises a coupling layer disposed between the base layer and buffer layer, wherein the coupling layer provides strong coupling between the hard layer and the reference layer.