×

THERMALLY-ASSISTED COLD-WELD BONDING FOR EPITAXIAL LIFT-OFF PROCESS

  • US 20160276520A1
  • Filed: 11/11/2014
  • Published: 09/22/2016
  • Est. Priority Date: 11/11/2013
  • Status: Abandoned Application
First Claim
Patent Images

1. A process for assembling a thin-film optoelectronic device comprising:

  • providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region, wherein the sacrificial layer is disposed between the wafer and the device region, and wherein the device region has a surface furthest from the wafer;

    providing a host substrate, wherein the host substrate comprises a polymer material;

    depositing a first metal layer on the surface of the device region;

    depositing a second metal layer on the host substrate;

    bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×