THERMALLY-ASSISTED COLD-WELD BONDING FOR EPITAXIAL LIFT-OFF PROCESS
First Claim
1. A process for assembling a thin-film optoelectronic device comprising:
- providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region, wherein the sacrificial layer is disposed between the wafer and the device region, and wherein the device region has a surface furthest from the wafer;
providing a host substrate, wherein the host substrate comprises a polymer material;
depositing a first metal layer on the surface of the device region;
depositing a second metal layer on the host substrate;
bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate.
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Accused Products
Abstract
A process for assembling a thin-film optoelectronic device is disclosed. The process may include providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region. The process may further include providing a host substrate and depositing a first metal layer on the device region and depositing a second metal layer on the host substrate. The process may further include bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate.
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Citations
19 Claims
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1. A process for assembling a thin-film optoelectronic device comprising:
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providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region, wherein the sacrificial layer is disposed between the wafer and the device region, and wherein the device region has a surface furthest from the wafer; providing a host substrate, wherein the host substrate comprises a polymer material; depositing a first metal layer on the surface of the device region; depositing a second metal layer on the host substrate; bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A process for assembling a thin-film optoelectronic device comprising:
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providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region, wherein the sacrificial layer is disposed between the wafer and the device region, and wherein the device region has a surface furthest from the wafer; providing a host substrate, wherein the host substrate comprises a metal foil; depositing a first metal layer on the surface of the device region; depositing a second metal layer on the host substrate; bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a melting temperature of the host substrate and 500°
C. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification