LIGHT EMITTING DIODE PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

• US 20160276543A1
• Filed: 03/18/2016
• Published: 09/22/2016
• Est. Priority Date: 03/18/2015
• Status: Active Grant

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Hung, Chin-Hua, Lin, Yu-Feng
• Granted Patent: US 10,032,747 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/866 Zener diodes
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/18161 of a flip chip
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/48 : characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

A light emitting diode package structure and a manufacturing method thereof are disclosed. The light emitting diode package structure includes a carrier substrate, a electrostatic protection component, and a light-emitting diode (LED). The carrier substrate has a first conductive pad and a second conductive pad. The electrostatic protection component is disposed on the carrier substrate and has a first electrode and a second electrode, wherein the first electrode and the second electrode are electrically connected to the first conductive pad and the second conductive pad respectively. The LED is disposed on the electrostatic protection component and has a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are electrically connected to the first conductive pad and the second conductive pad respectively.

Claims

1. A light emitting diode package structure, comprising:

a carrier substrate having a first conductive pad and a second conductive pad;

a protecting component disposed on the carrier substrate and having a first electrode and a second electrode, wherein the first electrode and the second electrode are electrically connected to the first conductive pad and the second conductive pad respectively; and

a light-emitting diode (LED) disposed above the electrostatic protection component and having a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are electrically connected to the first conductive pad and the second conductive pad respectively.

2. The light emitting diode package structure according to claim 1, wherein the carrier substrate has a recess within which the electrostatic protection component is disposed.

3. The light emitting diode package structure according to claim 2, wherein the LED has a surface area larger than a surface area of the recess.

4. The light emitting diode package structure according to claim 2, wherein the recess has a depth less than a half of a thickness of the carrier substrate.

5. The light emitting diode package structure according to claim 2, further comprising a highly reflective adhesive formed within the recess for securing the electrostatic protection component.

6. The light emitting diode package structure according to claim 5, wherein the highly reflective adhesive is further formed on a periphery of the LED.

7. The light emitting diode package structure according to claim 1, wherein the electrostatic protection component is a Zener diode.

8. The light emitting diode package structure according to claim 7, wherein the electrostatic protection component comprises a first reflective layer disposed on a top portion of the electrostatic protection component.

9. The light emitting diode package structure according to claim 1, wherein the LED comprises a second reflective layer disposed on a bottom portion of the LED.

10. The light emitting diode package structure according to claim 1, wherein the carrier substrate has two opposite sidewalls, and the electrostatic protection component is located within the sidewalls.

11. The light emitting diode package structure according to claim 1, wherein at least one of the first electrode and the second electrode of the electrostatic protection component is located between the third electrode and the fourth electrode of the LED.

12. A manufacturing method of a light emitting diode package structure, comprising:

providing a carrier substrate having a first conductive pad and a second conductive pad;

disposing an electrostatic protection component on the carrier substrate, wherein the electrostatic protection component has a first electrode and a second electrode;

electrically connecting the first electrode and the second electrode to the first conductive pad and the second conductive pad respectively;

disposing a LED above the carrier substrate, wherein the LED has a third electrode and a fourth electrode; and

electrically connecting the third electrode and the fourth electrode to the first conductive pad and the second conductive pad respectively.

13. The manufacturing method according to claim 12, further comprising:

disposing the electrostatic protection component on a recess of the carrier substrate.

14. The manufacturing method according to claim 13, further comprising:

forming a highly reflective adhesive within the recess for securing the electrostatic protection component.

15. The manufacturing method according to claim 14, further comprising:

forming the highly reflective adhesive on a periphery of the LED.

16. The manufacturing method according to claim 13, wherein the step of providing a carrier substrate comprises:

disposing an insulation body between the first conductive pad and the second conductive pad; and

forming the recess between the first conductive pad and the second conductive pad by way of half-etching technique.

17. The manufacturing method according to claim 13, wherein the step of providing the carrier substrate comprises:

providing the first conductive pad having a first sub-recess;

providing the second conductive pad having a second sub-recess, wherein the first sub-recess and the second sub-recess form the recess; and

disposing an insulation body between the first conductive pad and the second conductive pad.

18. The manufacturing method according to claim 13, wherein the step of providing the carrier substrate comprises:

forming a ceramic substrate by way of stacking technique, wherein the ceramic substrate has a recess;

forming a first conductive via and a second conductive via passing through the ceramic substrate;

forming a first conductive pad and a second conductive pad on an upper surface of the ceramic substrate, wherein the first conductive pad and the second conductive pad are electrically connected to the first conductive via and the second conductive via respectively; and

forming a third conductive pad and a fourth conductive pad on a lower surface of the ceramic substrate, wherein the third conductive pad and the fourth conductive pad are electrically connected to the first conductive via and the second conductive via respectively.

19. The manufacturing method according to claim 12, further comprising:

disposing a second reflective layer on a bottom portion of the LED.

20. The manufacturing method according to claim 12, further comprising:

disposing a first reflective layer on a top portion of the electrostatic protection component.