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SEMICONDUCTOR SWITCH

  • US 20160277018A1
  • Filed: 10/05/2015
  • Published: 09/22/2016
  • Est. Priority Date: 03/16/2015
  • Status: Active Grant
First Claim
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1. A semiconductor switch, comprising:

  • a support substrate;

    an insulating layer on the support substrate;

    a semiconductor layer on the insulating layer; and

    i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, whereinat least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, andeach of the plurality of first MOSFETs includes;

    a plurality of first gate electrodes extending in a first direction along the semiconductor layer;

    a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode;

    a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes; and

    a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction.

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