SEMICONDUCTOR SWITCH
First Claim
1. A semiconductor switch, comprising:
- a support substrate;
an insulating layer on the support substrate;
a semiconductor layer on the insulating layer; and
i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, whereinat least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, andeach of the plurality of first MOSFETs includes;
a plurality of first gate electrodes extending in a first direction along the semiconductor layer;
a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode;
a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes; and
a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction.
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Accused Products
Abstract
In an embodiment, semiconductor switch includes first switches switching conduction between input-output nodes and a common node. One of the first switches includes a plurality of first transistors connected in series between an input and output node and the common node. Each of the plurality of first transistors includes first gate electrodes, a second gate electrode, a first and second region in a semiconductor layer having a same conduction type. The first gate electrodes extend in parallel in a first direction. The second gate electrode extending in a direction crossing the first direction and is connected to one end of the first gate electrodes. The second region in the semiconductor layer is disposed on a side of the second gate electrode opposite to the first gate electrodes.
9 Citations
20 Claims
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1. A semiconductor switch, comprising:
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a support substrate; an insulating layer on the support substrate; a semiconductor layer on the insulating layer; and i-th first switches, where i is an integer value 1 to n, where n is an integer of 2 or more, on the semiconductor layer and configured to switch conduction between a common node and a respective i-th input-output node, wherein at least one i-th first switch includes a plurality of first metal-oxide-semiconductor field effect transistors (MOSFETs) connected in series between the common node and the respective i-th input-output node, and each of the plurality of first MOSFETs includes; a plurality of first gate electrodes extending in a first direction along the semiconductor layer; a second gate electrode extending in a second direction intersecting the first direction, each of the plurality of first gate electrodes having a first end contacting the second gate electrode and a second end distal in the first direction from the second gate electrode; a first region of the semiconductor layer having a first conductivity type between, in the second direction, the plurality of first gate electrodes; and a second region of the semiconductor layer having the first conductivity type on a side of the second gate electrode opposite to the plurality of first gate electrodes in the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor switch, comprising:
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i-th first switches, where i is an integer 1 to n, where n is an integer of 2 or more, configured to switch conduction between a common node and a respective i-th input-output node, wherein at least one of the i-th first switches includes; a first first metal-oxide-semiconductor field effect transistor (MOSFET) to a p-th first MOSFET, where p is an integer of 4 or more, connected in series between the respective i-th input-output node and the common node, and x-th first resistors, where x is an integer 1 to p, each x-th resistor being connected between a first body control line and a body of a corresponding x-th one of first to p-th first MOSFETs, the first to p-th first MOSFETs are connected in sequential order, 1 to p, from the common node to the respective i-th input-output node, and a resistance value of the first first resistor is greater than a resistance value of the p-th first resistor. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor switch, comprising:
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i-th first switches, where i is an integer 1 to n, where n is an integer of 2 of more, configured to switch conduction between a common node and a respective i-th input-output node, wherein at least one of the i-th first switches includes; a first first metal-oxide-semiconductor field effect transistor (MOSFET) to a p-th first MOSFET, where p is an integer of 4 or more, connected in series between the respective i-th input-output node and the common node, and x-th first diodes, where x is an integer 1 to p, and x-th first resistors, each x-th first diode being connected in series with a respective x-th first resistor between a body and a gate of a respective x-th one of the first to p-th first MOSFETs, the first to the p-th first MOSFET are connected in sequential order, 1 to p, from the common node to the respective i-th input-output node, and a resistance value of the first first resistor is greater than a resistance value of the p-th first resistor. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification