FORMATION METHOD OF HEXAGONAL BORON NITRIDE THICK FILM ON A SUBSTRATE AND HEXAGONAL BORON NITRIDE THICK FILM LAMINATES THEREBY

• US 20160281221A1
• Filed: 02/26/2016
• Published: 09/29/2016
• Est. Priority Date: 03/27/2015
• Status: Active Grant

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: KIM, Soo-Min, KIM, Ki-Kang, Lee, Joo-Song
• Granted Patent: US 10,113,230 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C01B 21/0641 Preparation by direct nitridation of elemental boron
• CPC Class Codes: C01P 2002/82 by IR- or Raman-data
• CPC Class Codes: C01P 2004/01 depicted by an image
• CPC Class Codes: C01P 2004/03 obtained by SEM
• CPC Class Codes: C01P 2004/04 obtained by TEM, STEM, STM or AFM
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/0209 by heating
• CPC Class Codes: C23C 16/342 Boron nitride
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: C25B 1/02 Hydrogen or oxygen

Abstract

The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film

Claims

1. A method of forming a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, the method comprising:

(a) a substrate heating step of heating a first substrate;

(b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate;

(c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate; and

(d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein.

2. The method of forming a multilayer h-BN thick film on a substrate according to claim 1, after the substrate cooling step further comprising:

a second substrate forming step of forming a second substrate on the cooled substrate.

3. The method of forming a multilayer h-BN thick film on a substrate according to claim 2, after the second substrate forming step further comprising:

a h-BN thick film separation step of separating a h-BN thick film from the first substrate in an aqueous solution.

4. The method of forming a multilayer h-BN thick film on a substrate according to claim 3, after the h-BN thick film separation step further comprising:

a h-BN thick film transferring step of transferring the h-BN thick film on a third substrate.

5. The method of forming a multilayer h-BN thick film on a substrate according to claim 4, after the h-BN transferring step further comprising:

a second substrate removing step of removing the second substrate.

6. The method of forming a multilayer h-BN thick film on a substrate according to claim 1, wherein the first substrate is any one selected from the group consisting of gold (Au), copper (Cu), iron (Fe), manganese (Mn), nickel (Ni), cobalt (Co), palladium (Pd), titanium (Ti), and platinum (Pt).

7. The method of forming a multilayer h-BN thick film on a substrate according to claim 2, wherein the second substrate is at least one selected from the group consisting of a polymer, an adhesive tape, a heat peelable tape, and a photoresist.

8. The method of forming a multilayer h-BN thick film on a substrate according to claim 3, wherein the h-BN thick film separating step comprises separating the h-BN thick film using hydrogen produced at an interface between the first substrate and the h-BN thick film by connecting a minus electrode to the first substrate and connecting a plus electrode to a separate counter electrode in an aqueous solution.

9. The method of forming a multilayer h-BN thick film on a substrate according to claim 4, wherein the third substrate is any one selected from the group consisting of a flexible substrate, a conductive material, a dielectric material, and a semiconductor material.

10. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according to claim 1; and

a substrate which forms a stack structure with the h-BN thick film.

11. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 2; and

a substrate which forms a stack structure with the h-BN thick film.

12. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 3; and

a substrate which forms a stack structure with the h-BN thick film.

13. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 4; and

a substrate which forms a stack structure with the h-BN thick film.

14. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 5; and

a substrate which forms a stack structure with the h-BN thick film.

15. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 6; and

a substrate which forms a stack structure with the h-BN thick film.

16. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 7; and

a substrate which forms a stack structure with the h-BN thick film.

17. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 8; and

a substrate which forms a stack structure with the h-BN thick film.

18. A hexagonal boron nitride (h-BN) thick film laminate comprising:

a multilayer h-BN thick film prepared by a method according claim 9; and

a substrate which forms a stack structure with the h-BN thick film.