METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

• US 20160284542A1
• Filed: 03/17/2016
• Published: 09/29/2016
• Est. Priority Date: 03/25/2015
• Status: Active Application

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: NODA, Takaaki, KONNO, Kotaro, NOHARA, Shingo, HANASHIMA, Takeo
• Application Number:
  US15/073,084
• Publication Number:
  US 20160284542A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45534 Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02277 the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed; and

purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

2. The method of claim 1, wherein the first temperature is set at a temperature of 0 degrees C. or more and 150 degrees C. or less.

3. The method of claim 1, wherein a plasma-excited oxygen-containing gas is used as the plasma-excited gas.

4. The method of claim 1, wherein at least one selected from a group consisting of isopropyl alcohol, ethanol and methanol, is used as the alcohol.

5. The method of claim 1, wherein silicon hydride is used as the reducing agent.

6. The method of claim 1, wherein a plasma-excited hydrogen-containing gas is used as the reducing agent.

7. The method of claim 1, wherein in the act of purging the interior of the process chamber, an internal pressure of the process chamber is changed.

8. The method of claim 1, wherein the act of purging the interior of the process chamber is performed in a state in which the substrate does not exist in the process chamber.

9. The method of claim 1, wherein the act of purging the interior of the process chamber is performed in a state in which the substrate exists in the process chamber.

10. The method of claim 1, wherein an oxidant is used as the reactant.

11. The method of claim 10, wherein a plasma-excited oxygen-containing gas is used as the oxidant.

12. The method of claim 11, wherein in the act of forming the film, a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing:

supplying the precursor; and

supplying the oxidant.

13. The method of claim 1, wherein the precursor contains an amino group.

14. The method of claim 1, wherein the act of forming the film further includes supplying a catalyst to the substrate.

15. The method of claim 1, wherein in the act of forming the film, a cycle is performed a predetermined number of times, the cycle including non-simultaneously performing:

supplying the precursor and a catalyst to the substrate; and

supplying the reactant and a catalyst to the substrate.

16. The method of claim 1, wherein the precursor contains a halogen group.

17. A substrate processing apparatus, comprising:

a process chamber configured to accommodate a substrate;

a first supply system configured to supply a precursor to the substrate in the process chamber;

a second supply system configured to supply a reactant to the substrate in the process chamber;

a third supply system configured to supply at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber;

a heater configured to heat an interior of the process chamber; and

a control part configured to control the first supply system, the second supply system, the third supply system, and the heater so as to perform;

forming a film on the substrate in the process chamber by supplying the precursor and the reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed; and

purging, after performing the act of forming the film, the interior of the process chamber by supplying at least one selected from a group consisting of the plasma-excited gas, the alcohol, and the reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

18. A non-transitory computer-readable recording medium storing a program that causes a computer to perform:

forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed; and

purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.