III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR
First Claim
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1. A method comprising:
- growing a first III-nitride layer over a substrate;
making at least a portion of the first III-nitride layer porous;
growing a second III-nitride layer over the porous portion, wherein the second layer is InGaN; and
growing a device structure over the second III-nitride layer, the device structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region.
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Abstract
A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.
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Citations
13 Claims
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1. A method comprising:
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growing a first III-nitride layer over a substrate; making at least a portion of the first III-nitride layer porous; growing a second III-nitride layer over the porous portion, wherein the second layer is InGaN; and growing a device structure over the second III-nitride layer, the device structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification