THIN FILM CAPACITOR
First Claim
Patent Images
1. A thin film capacitor comprising:
- a substrate;
a stress adjustment layer formed on a main surface of the substrate;
a lower electrode formed on the stress adjustment layer;
a dielectric thin film configured to cover the lower electrode; and
an upper electrode formed on the dielectric thin film,wherein the lower electrode has an uneven surface structure of a vertical cross section in a thickness direction of the substrate,wherein the upper electrode has an uneven surface structure of a vertical cross section in a thickness direction of the substrate,wherein a projecting portion of the upper electrode projecting to a lower electrode side is positioned in a gap between projecting portions of the lower electrode,wherein the lower electrode includes Cu as a main component, andwherein a Young'"'"'s modulus ESS of the substrate, a Young'"'"'s modulus ESC of the stress adjustment layer, and a Young'"'"'s modulus ELE of the lower electrode satisfy the relational expressions ELE<
ESC and ESS<
ESC.
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Abstract
A lower electrode (4) can have an uneven surface structure. An upper electrode (6) can also have the uneven surface structure. A projecting portion of the upper electrode (6) projecting to the lower electrode side is positioned in a gap between projecting portions of the lower electrode (4) and the lower electrode (4) includes Cu as a main component. Young'"'"'s moduli of a substrate (1), a stress adjustment layer (2), and the lower electrode (4) have a specific relation. Also, corner portions of radii (R1) of curvature positioned inside a projecting portion (4b) have a specific relation.
22 Citations
14 Claims
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1. A thin film capacitor comprising:
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a substrate; a stress adjustment layer formed on a main surface of the substrate; a lower electrode formed on the stress adjustment layer; a dielectric thin film configured to cover the lower electrode; and an upper electrode formed on the dielectric thin film, wherein the lower electrode has an uneven surface structure of a vertical cross section in a thickness direction of the substrate, wherein the upper electrode has an uneven surface structure of a vertical cross section in a thickness direction of the substrate, wherein a projecting portion of the upper electrode projecting to a lower electrode side is positioned in a gap between projecting portions of the lower electrode, wherein the lower electrode includes Cu as a main component, and wherein a Young'"'"'s modulus ESS of the substrate, a Young'"'"'s modulus ESC of the stress adjustment layer, and a Young'"'"'s modulus ELE of the lower electrode satisfy the relational expressions ELE<
ESC and ESS<
ESC. - View Dependent Claims (2, 3, 4)
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5. A thin film capacitor comprising:
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a substrate; an insulating layer formed on a main surface of the substrate; a lower electrode formed on the insulating layer; a dielectric thin film configured to cover the lower electrode; and an upper electrode formed on the dielectric thin film, wherein the lower electrode has an uneven surface structure of a vertical cross section in a thickness direction of the substrate, wherein the upper electrode has an uneven surface structure of a vertical cross section in a thickness direction of the substrate, wherein a projecting portion of the upper electrode projecting to a lower electrode side is positioned in a gap between projecting portions of the lower electrode, wherein, when an XYZ three-dimensional coordinate system is set, the main surface is an XY plane, and a direction in which a plurality of projecting portions of the lower electrode are arranged is designated as an X-axis direction, a distal end of the projecting portion of the lower electrode within the XZ plane has a corner portion of a radius R1 of curvature in which a center of curvature is positioned inside the projecting portion, and wherein the radius R1 of curvature and a thickness td of the dielectric thin film satisfy the relational expression 0.4×
td≦
R1≦
20×
td. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A thin film capacitor comprising:
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a substrate; an insulating layer formed on a main surface of the substrate; a lower electrode formed on the insulating layer; a dielectric thin film configured to cover the lower electrode; an upper electrode formed on the dielectric thin film; a first terminal provided in the lower electrode; and a second terminal provided in the upper electrode, wherein, when an XYZ three-dimensional coordinate system is set, the main surface is an XY plane, and a direction in which the first terminal and the second terminal are connected is designated as an X-axis, the lower electrode has an uneven surface structure and a longitudinal direction of a top surface of the projecting portion of the uneven surface structure is in the X-axis direction. - View Dependent Claims (13, 14)
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Specification