FINFETS HAVING STRAINED CHANNELS, AND METHODS OF FABRICATING FINFETS HAVING STRAINED CHANNELS
First Claim
Patent Images
1. A finFET comprising:
- a fin having recessed source and drain regions;
a spacer layer formed adjacent the side walls of the recessed source and drain regions; and
a strain-inducing material formed at the source and drain regions, wherein a height of the fin at the recessed source and drain regions is approximately equal to a height of the spacer layer adjacent the side walls of the recessed source and drain regions.
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Abstract
Techniques and structures for controlling etch-back of a finFET fin are described. One or more layers may be deposited over the fin and etched. Etch-back of a planarization layer may be used to determine a self-limited etch height of one or more layers adjacent the fin and a self-limited etch height of the fin. Strain-inducing material may be formed at regions of the etched fin to induce strain in the channel of a finFET.
65 Citations
12 Claims
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1. A finFET comprising:
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a fin having recessed source and drain regions; a spacer layer formed adjacent the side walls of the recessed source and drain regions; and a strain-inducing material formed at the source and drain regions, wherein a height of the fin at the recessed source and drain regions is approximately equal to a height of the spacer layer adjacent the side walls of the recessed source and drain regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification