METHOD FOR MANUFACTURING QUANTUM DOT LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE USING QUANTUM DOT

• US 20160293875A1
• Filed: 12/04/2013
• Published: 10/06/2016
• Est. Priority Date: 08/21/2013
• Status: Abandoned Application

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: ZHANG, Feng, YAO, Qi
• Application Number:
  US14/369,653
• Publication Number:
  US 20160293875A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

The present invention provides a method for manufacturing a quantum dot light-emitting element and a display device. The method comprises mixing a quantum dot light-emitting material and a hole-transporting material or mixing the quantum dot light-emitting material and an electron-transporting material, and dissolving a mixture into an organic solvent to form a mixed solvent, applying the mixed solvent to a substrate for manufacturing a quantum dot light-emitting element, removing the organic solvent form the mixed solvent to stratify the quantum dot light-emitting material and the hole-transporting material or the electron-transporting material on the substrate for manufacturing a quantum dot light-emitting element to form a quantum dot light-emitting layer and a hole-transporting layer or an electron-transporting layer.

Claims

1. A method for manufacturing a quantum dot light-emitting element, comprising:

mixing a quantum dot light-emitting material and a hole-transporting material and dissolving a mixture into an organic solvent to form a first mixed solvent,

applying the first mixed solvent to a first substrate for manufacturing the quantum dot light-emitting element, and

removing the organic solvent from the first mixed solvent to stratify the quantum dot light-emitting material and the hole-transporting material on the substrate and to form a quantum dot light-emitting layer and a hole-transporting layer,

or

mixing the quantum dot light-emitting material and an electron-transporting material and dissolving a mixture into the organic solvent to form a second mixed solvent,

applying the second mixed solvent to a second substrate for manufacturing the quantum dot light-emitting element, and

removing the organic solvent from the second mixed solvent to stratify the quantum dot light-emitting material and the electron-transporting material on the substrate and to form the quantum dot light-emitting layer and an electron-transporting layer.

2. The method for manufacturing the quantum dot light-emitting element according to claim 1, wherein the first substrate for manufacturing the quantum dot light-emitting element comprises a lower substrate and an anode formed on the lower substrate.

3. The method for manufacturing the quantum dot light-emitting element according to claim 2, wherein after forming the quantum dot light-emitting layer and the hole-transporting layer, said method further comprises:

depositing the electron-transporting material on the quantum dot light-emitting layer to form the electron-transporting layer,

forming a cathode on a surface of the electron-transporting layer, and

preparing an upper substrate and connecting the upper substrate and the cathode.

4. The method for manufacturing the quantum dot light-emitting element according to claim 1, wherein the second substrate for manufacturing the quantum dot light-emitting element comprises an upper substrate and a cathode formed on the upper substrate.

5. The method for manufacturing the quantum dot light-emitting element according to claim 4, wherein after forming the quantum dot light-emitting layer and the electron-transporting layer, said method further comprises

depositing the hole-transporting material on a surface of the quantum dot light-emitting layer to form the hole-transporting layer,

forming an anode on the surface of the hole-transporting layer, and

preparing a lower substrate and connecting the lower substrate and the anode.

6. The method for manufacturing the quantum dot light-emitting element according to claim 3, wherein a driver circuit connected with the anode is formed on the lower substrate and a light filtering layer is formed on the upper substrate.

7. The method for manufacturing the quantum dot light-emitting element according to claim 1, wherein the organic solvent in the first mixed solvent or the organic solvent in the second mixed solvent is removed by heating.

11. The method for manufacturing the quantum dot light-emitting element according to claim 5, wherein a driver circuit connected with the anode is formed on the lower substrate and a light filtering layer is formed on the upper substrate.

8. A display device using quantum dot comprising a quantum dot light-emitting element manufactured by a method for manufacturing the quantum dot light-emitting element comprising:

mixing a quantum dot light-emitting material and a hole-transporting material and dissolving a mixture into an organic solvent to form a first mixed solvent,

applying the first mixed solvent to a first substrate for manufacturing the quantum dot light-emitting element, and

removing the organic solvent from the first mixed solvent to stratify the quantum dot light-emitting material and the hole-transporting material on the substrate and to form a quantum dot light-emitting layer and a hole-transporting layer,

or

mixing the quantum dot light-emitting material and an electron-transporting material and dissolving a mixture into the organic solvent to form a second mixed solvent,

applying the second mixed solvent to a second substrate for manufacturing the quantum dot light-emitting element, and

removing the organic solvent from the second mixed solvent to stratify the quantum dot light-emitting material and the electron-transporting material on the substrate and to form the quantum dot light-emitting layer and an electron-transporting layer

9. The display device using quantum dot according to claim 8, further comprising:

a driver circuit, formed on the lower substrate, and

a light filtering layer, formed on the upper substrate and connected with the cathode.

10. The display device using quantum dot according to claim 8, further comprising:

a driver circuit and a black matrix,

wherein the driver circuit and the black matrix are formed on the lower substrate, and the lower substrate is divided into a plurality of pixel corresponding areas by the black matrix, and each of the pixel corresponding areas comprises three sub-areas,

wherein the anode is formed on each of the sub-areas and is connected with the driver circuit, and in each of the sub-areas, the hole-transporting layer, the quantum dot light-emitting layer and the electron-transporting layer are successively formed from the anode up, and the quantum dot light-emitting layers located in different the sub-areas can emit lights in different colors, and the cathode is formed on the whole electron-transporting layer, and the substrate is provided to be connected with the cathode.

12. The display device using quantum dot according to claim 8, wherein the first substrate for manufacturing the quantum dot light-emitting element comprises a lower substrate and an anode formed on the lower substrate.

13. The display device using quantum dot according to claim 12, wherein after forming the quantum dot light-emitting layer and the hole-transporting layer, said method further comprises:

depositing the electron-transporting material on the quantum dot light-emitting layer to form the electron-transporting layer,

forming a cathode on a surface of the electron-transporting layer, and

preparing an upper substrate and connecting the upper substrate and the cathode.

14. The display device using quantum dot according to claim 8, wherein the second substrate for manufacturing the quantum dot light-emitting element comprises an upper substrate and a cathode formed on the upper substrate.

15. The display device using quantum dot according to claim 14, wherein after forming the quantum dot light-emitting layer and the electron-transporting layer, said method further comprises

depositing the hole-transporting material on a surface of the quantum dot light-emitting layer to form the hole-transporting layer,

forming an anode on the surface of the hole-transporting layer, and

preparing a lower substrate and connecting the lower substrate and the anode.

16. The display device using quantum dot according to claim 13, wherein a driver circuit connected with the anode is formed on the lower substrate and a light filtering layer is formed on the upper substrate.

17. The display device using quantum dot according to claim 15, wherein a driver circuit connected with the anode is formed on the lower substrate and a light filtering layer is formed on the upper substrate.

18. The display device using quantum dot according to claim 8, wherein the organic solvent in the first mixed solvent or the organic solvent in the second mixed solvent is removed by heating.