APPARATUSES AND METHODS TO REVERSE DATA STORED IN MEMORY

• US 20160306584A1
• Filed: 04/14/2016
• Published: 10/20/2016
• Est. Priority Date: 04/16/2015
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Zawodny, Jason T., Hush, Glen E.
• Granted Patent: US 9,959,923 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/408 Address circuits
• CPC Class Codes: G11C 11/4091 Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• CPC Class Codes: G11C 11/4096 Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
• CPC Class Codes: G11C 11/4097 Bit-line organisation, e.g. bit-line layout, folded bit lines
• CPC Class Codes: G11C 16/28 using differential sensing or reference cells, e.g. dummy cells
• CPC Class Codes: G11C 2211/4013 Memory devices with multiple cells per bit, e.g. twin-cells
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Abstract

Apparatuses and methods are provided for reversing data stored in memory. An example apparatus comprises an array of memory cells, a first plurality of sensing components corresponding to a respective first plurality of columns of the array, a second plurality of sensing components corresponding to a respective second plurality of columns of the array, and a plurality of shared input/output (I/O) lines (which may be referred to as SIO lines). Each one of the plurality of SIO lines can be selectively coupled to a respective subset of the first plurality of sensing components and to a respective subset of the second plurality of sensing components. The apparatus can include a controller configured to control reversing a logical sequence of data stored in a group of memory cells coupled to a first access line of the array by performing a plurality of transfer operations via the plurality of SIO lines.

Claims

1. An apparatus, comprising:

an array of memory cells;

a first plurality of sensing components corresponding to a respective first plurality of columns of the array;

a second plurality of sensing components corresponding to a respective second plurality of columns of the array;

a plurality of shared input/output (SIO) lines, wherein each one of the plurality of SIO lines is selectively coupled to a respective subset of the first plurality of sensing components and to a respective subset of the second plurality of sensing components; and

a controller configured to control reversing a logical sequence of data stored in a group of memory cells coupled to a first access line of the array by performing a plurality of transfer operations via the plurality of SIO lines.

2. The apparatus of claim 1, wherein performing the plurality of transfer operations comprises transferring data between subsets of the first plurality of sensing components and respective subsets of the second plurality of sensing components.

3. The apparatus of claim 1, further comprising a plurality of temporary storage locations including a plurality of memory cells coupled to a third access line of the array and coupled to respective columns of a first subset of the first plurality of columns.

4. The apparatus of claim 1, further comprising a second access line, wherein the first access line and the second access line are a same access line such that, subsequent to performing the plurality of transfer operations, the logical sequence of the data stored in the group of memory cells is reversed.

5. The apparatus of claim 1, wherein the first plurality of sensing components and the second plurality of sensing components each comprise a sense amplifier and a compute component formed on pitch with the array.

6. The apparatus of claim 1, wherein the controller is configured to:

sense data stored in the subset of the first plurality of memory cells, the subset of the first plurality of memory cells comprising memory cells each corresponding to one of the respective first plurality columns;

transfer the data sensed from the subset of the first plurality of memory cells to memory cells coupled to the access line of the array;

sense data stored in the subset of the second plurality of memory cells, the subset of the second plurality of memory cells comprising memory cells each corresponding to one of the respective second plurality of columns, the columns to which the subset of the second plurality of memory cells correspond being different columns than the columns to which the subset of the first plurality of memory cells correspond; and

transfer, via the SIO lines, the data sensed from the subset of the second plurality of cells to sensing components corresponding to the respective first plurality of columns to which the subset of the first plurality of memory cells correspond.

7. The apparatus of claim 6, wherein the respective first plurality of columns includes at least 2,048 columns such that at least 2,048 bits of data are transferred for each of the plurality of transfer operations.

8. The apparatus of claim 6, wherein each of the respective second plurality of columns are associated with a respective pair of complementary sense lines, and wherein the complementary sense lines are arranged in a folded architecture.

9. The apparatus of claim 1, wherein each one of the plurality of SIO lines comprises a pair of complementary SIO lines.

10. An apparatus, comprising:

an array including a first memory cell, a second memory cell, a third memory cell, and a fourth memory cell;

a first shared input/output (SIO) line and a second SIO line;

a first sensing component, a second sensing component, a third sensing component, and a fourth sensing component, wherein each of the first, second, third, and fourth sensing components are coupled to a corresponding first, second, third, and fourth memory cell;

a first select device coupled between the first sensing component and the first SIO line;

a second select device coupled between the second sensing component and the second SIO line;

a third select device coupled between the third sensing component and the first SIO line; and

a fourth select device coupled between the fourth sensing component and the second SIO line, wherein

the first and second memory cells are assigned logical index information in a first logical sequence, and the third and fourth memory cells are assigned logical index information in a second logical sequence opposite to the first logical sequence.

11. The apparatus of claim 10, further comprising:

a controller configured to;

transfer data from the first memory cell to the third memory cell via the first SIO line; and

transfer data from the second memory cell to the fourth memory cell via the second SIO line.

12. The apparatus of claim 10, wherein each of the first, second, third, and fourth sensing components comprises:

a sense amplifier; and

a compute component coupled to the sense amplifier and configured to perform a logical operation.

13. The apparatus of claim 10, further comprising a controller configured to enable the first, second, third, and fourth select devices, such that the first, second, third, and fourth select devices are conductive.

14. The apparatus of claim 10, further comprising a peripheral sense amplifier coupled between the first SIO line and a data bus.

15. The apparatus of claim 10, the third and fourth memory cells are assigned logical index information in a second logical sequence opposite to the first logical sequence without transferring data associated with the first, second, third, or fourth memory cells out of the array.

16. The apparatus of claim 10, wherein the first and second memory cells are coupled a to a first access line of the array, and the third and fourth memory cells are coupled to a second access line of the array.

17. A method, comprising:

sensing, via a first plurality of sensing components each corresponding to one of a respective first plurality of columns of an array, a respective first plurality of memory cells coupled to a first access line of the array, wherein the data stored in the first plurality of memory cells is stored in accordance with a particular logical sequence;

transferring, via a plurality of shared input/output (SIO) lines, the sensed data from the first plurality of sensing components to a second plurality of sensing components each corresponding to one of a respective second plurality of columns of the array, wherein the plurality of shared SIO lines are shared by the first plurality of sensing components and the second plurality of sensing components;

transferring the sensed data from the second plurality of sensing components to a respective second plurality of memory cells coupled to a second access line of the array;

wherein a logical sequence of the data transferred to the second plurality of memory cells is a reverse of the particular logical sequence.

18. The method of claim 17, wherein the sensed data includes all data stored in the memory cells coupled to the source access line.

19. The method of claim 17, wherein each of the plurality of sensing components comprises a sense amplifier and a compute component.

20. The method of claim 17, wherein the source access line and the destination access line are different lines.

21. The method of claim 17, wherein each of the plurality of SIO lines is selectively coupled to a subset of the plurality of sensing components.

22. The method of claim 21, wherein the subset comprises a group of physically adjacent sensing components.

23. The method of claim 17, wherein the particular logical sequence is reversed without transferring the sensed data out of the array and sensing components coupled thereto.

24. A method, comprising:

reversing a logical sequence of data stored in a group of memory cells coupled to a first access line of an array by performing a plurality of transfer operations via a plurality of shared input/output (SIO) lines;

wherein the array comprises a first plurality of sensing components corresponding to a respective first plurality of columns of the array and a second plurality of sensing components corresponding to a respective second plurality of columns of the array; and

wherein each one of the plurality of SIO lines is selectively coupled to a respective subset of the first plurality of sensing components and to a respective subset of the second plurality of sensing components.

25. The method of claim 24, wherein performing the plurality of transfer operations comprises transferring data between subsets of the first plurality of sensing components and respective subsets of the second plurality of sensing components.

26. The method of claim 24, wherein performing the plurality of transfer operations comprises:

sensing a first subset of the group of memory cells coupled to the first access line of the array, the first subset of the group of memory cells corresponding to a respective first subset of the first plurality of columns;

storing, in a plurality of temporary storage locations, data sensed from the first subset of the group of memory cells;

sensing a second subset of the group of memory cells coupled to the first access line of the array, the second subset of the group of memory cells corresponding to a respective first subset of the second plurality of columns;

transferring, via the plurality of SIO lines, data sensed from the second subset of the group of memory cells to sensing components corresponding to the respective first subset of the first plurality of columns; and

storing the data transferred to the sensing components corresponding to the respective first subset of the first plurality of columns to a group of memory cells coupled to a second access line of the array and coupled to respective columns of the first subset of the first plurality of columns.

27. The method of claim 26, wherein performing the plurality of transfer operations further comprises:

transferring, via the plurality of SIO lines, data stored in the plurality of temporary storage locations to sensing components corresponding to the first subset of the second plurality of columns; and

storing the data transferred to the sensing components corresponding to the first subset of the second plurality of columns to a group of memory cells coupled to the second access line of the array and coupled to respective columns of the first subset of the second plurality of columns.