SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20160307845A1
• Filed: 03/22/2016
• Published: 10/20/2016
• Est. Priority Date: 04/16/2015
• Status: Abandoned Application

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: FURUHASHI, Takahisa
• Application Number:
  US15/077,741
• Publication Number:
  US 20160307845A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers

Abstract

An object of the invention is to provide a semiconductor device with buried copper wirings having improved reliability. An interlayer insulating film including a porous Low-k film has, in a wiring trench thereof, a wiring. The wiring has a first barrier conductor film formed on the bottom surface and the side wall of the wiring trench, a second barrier conductor film formed on the first barrier conductor film, and a main conductor film formed on the second barrier conductor film and comprised mainly of copper. The first barrier conductor film and the second barrier conductor film are made of the same conductor material but the first conductor film has a density lower than that of the second barrier conductor film.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate;

an interlayer insulating film formed over the semiconductor substrate; and

a wiring buried in a wiring trench in the interlayer insulating film,

wherein the wiring comprises;

a first barrier conductor film formed over the bottom surface and side wall of the wiring trench;

a second barrier conductor film formed over the first barrier conductor film; and

a main conductor film formed over the second barrier conductor film and has copper as a main component,

wherein the interlayer insulating film includes a porous low-dielectric-constant insulating film,

wherein the first barrier conductor film and the second barrier conductor film has the same conductor material, and

wherein the first barrier conductor film has a density lower than that of the second barrier conductor film.

2. The semiconductor device according to claim 1,

wherein the second barrier conductor film has a thickness greater than that of the first barrier conductor film.

3. The semiconductor device according to claim 1,

wherein the first barrier conductor film and the second barrier conductor film have the same crystal structure.

4. The semiconductor device according to claim 1,

wherein the wiring further comprises a third barrier conductor film sandwiched between the second barrier conductor film and the main conductor film, and

wherein the third barrier conductor film has a conductor material different from that of the first barrier conductor film and the second barrier conductor film.

5. The semiconductor device according to claim 4,

wherein the first barrier conductor film and the second barrier conductor film each have a tantalum nitride film.

6. The semiconductor device according to claim 5,

wherein the third barrier conductor film has a tantalum film.

7. The semiconductor device according to claim 1,

wherein the first barrier conductor film and the second barrier conductor film each have a tantalum film.

8. The semiconductor device according to claim 1,

wherein the density of the first barrier conductor film is from 50 to 90% of a density of a perfect crystal of the material configuring the first barrier conductor film.

9. The semiconductor device according to claim 8,

wherein the density of the second barrier conductor film is more than 90% of a density of a perfect crystal of the material configuring the second barrier conductor film.

10. A method of manufacturing a semiconductor device, comprising the steps of:

(a) forming, over a semiconductor substrate, an interlayer insulating film including a porous low-dielectric-constant insulating film;

(b) forming a wiring trench in the interlayer insulating film;

(c) forming a first barrier conductor film over the interlayer insulating film including a bottom surface and a side wall of the wiring trench;

(d) forming a second barrier conductor film over the first barrier conductor film;

(e) forming, over the second barrier conductor film, a main conductor film having copper as a main component so as to fill the wiring trench therewith; and

(f) forming a wiring buried in the wiring trench by removing the main conductor film, the second barrier conductor film, and the first barrier conductor film outside the wiring trench and leaving the main conductor film, the second barrier conductor film, and the first barrier conductor film in the ing trench,

wherein the first barrier conductor film and the second barrier conductor film have the same conductor material, and

wherein the first barrier conductor film has a density lower than that of the second barrier conductor film.

11. The method of manufacturing a semiconductor device according to claim 10,

wherein in the step (c), sputtering is used for the formation of the first barrier conductor film, and

wherein in the step (d), sputtering is used for the formation of the second barrier conductor film.

12. The method of manufacturing a semiconductor device according to claim 10,

wherein in the step (c), ALD is used for the formation of the first barrier conductor film, and

wherein in the step (d), sputtering is used for the formation of the second barrier conductor film.

13. The method of manufacturing a semiconductor device according to claim 10,

wherein the second barrier conductor film has a thickness greater than that of the first barrier conductor film.

14. The method of manufacturing a semiconductor device according to claim 10,

wherein the first barrier conductor film and the second barrier conductor film have the same crystal structure.

15. The method of manufacturing a semiconductor device according to claim 10, further comprising, after the step (d) but before the step (e), a step of:

(d1) forming a third barrier conductor film over the second barrier conductor film,

wherein the third barrier conductor film has a conductor material different from that of the first barrier conductor films and the second barrier conductor film,

wherein in the step (e), the main conductor film is formed over the third barrier conductor film so as to fill the wiring trench, and

wherein in the step (f), the wiring buried in the wiring trench is formed by removing the main conductor film, the third barrier conductor film, the second barrier conductor film, and the first barrier conductor film outside the wiring trench and leaving the main conductor film, the third barrier conductor film, the second barrier conductor film, and the first barrier conductor film in the wiring trench.

16. The method of manufacturing a semiconductor device according to claim 15,

wherein the first barrier conductor film and the second barrier conductor film each have a tantalum nitride film, and

wherein the third barrier conductor film has a tantalum film.

17. The method of manufacturing a semiconductor device according to claim 10,

wherein the first barrier conductor film and the second barrier conductor film each have a tantalum film.

18. The method of manufacturing a semiconductor device according to claim 10,

wherein a density of the first barrier conductor film is from 50 to 90% of a density of a perfect crystal of the material configuring the first barrier conductor films.

19. The method of manufacturing a semiconductor device according to claim 18,

wherein the density of the second barrier conductor film is more than 90% of a density of a perfect crystal of the material configuring the second barrier conductor film.