THIN-FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING A DISPLAY APPARATUS

• US 20160307979A1
• Filed: 11/04/2015
• Published: 10/20/2016
• Est. Priority Date: 04/14/2015
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: LEE, JAEHYUN
• Application Number:
  US14/932,107
• Publication Number:
  US 20160307979A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G09G 3/3225 using an active matrix
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1229 with different crystal properties within a device or between different devices
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78666 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

A thin-film transistor (TFT) substrate includes a substrate, a first TFT disposed on the substrate and a second TFT disposed on the substrate. The first TFT includes a first active pattern having a first hydrogen density and a first gate electrode overlapping a portion of the first active pattern. The second TFT includes a second active pattern having a second hydrogen density higher than the first hydrogen density and a second gate electrode overlapping a portion of the second active pattern.

Claims

1. A thin-film transistor (TFT) substrate comprising:

a substrate;

a first TFT disposed on the substrate, wherein the first TFT comprises a first active pattern having a first hydrogen density and a first gate electrode overlapping a portion of the first active pattern; and

a second TFT disposed on the substrate, wherein the second TFT comprises a second active pattern having a second hydrogen density higher than the first hydrogen density and a second gate electrode overlapping a portion of the second active pattern.

2. The TFT substrate of claim 1, wherein the second TFT transfers a data signal in synchronization with a scan signal, and the first TFT outputs a driving current corresponding to the data signal.

3. The TFT substrate of claim 1, further comprising a gate insulating layer disposed between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode to insulate the first active pattern from the first gate electrode and to insulate the second active pattern from the second gate electrode.

wherein the gate insulating layer comprises a first contact hole disposed on the first active pattern and a second contact hole disposed on the second active pattern.

4. A display apparatus comprising:

the TFT substrate of claim 1; and

a display element disposed on the TFT substrate.

5. A display apparatus comprising:

the TFT substrate of claim 2; and

a display element disposed on the TFT substrate.

6. A display apparatus comprising:

the TFT substrate of claim 3; and

a display element disposed on the TFT substrate.

7. A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:

forming a first TFT on a substrate, the first TFT including a first active pattern and a first gate electrode overlapping a portion of the first active pattern;

forming a second TFT on the substrate, the second TFT including a second active pattern and a second gate electrode overlapping a portion of the second active pattern;

forming an insulating layer on the first TFT and the second TFT;

forming a first contact hole in the insulating layer to expose a portion of the first active pattern;

forming a second contact hole in the insulating layer to expose a portion of the second active pattern; and

annealing the first contact hole at a first temperature and annealing the second contact hole at a second temperature that is lower than the first temperature.

8. The method of claim 7, wherein the second TFT transfers a data signal in synchronization with a scan signal, and the first TFT outputs a driving current corresponding to the data signal.

9. The method of claim 7, further comprising forming a gate insulating layer between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode to insulate the first active pattern from the first gate electrode and to insulate the second active pattern from the second gate electrode,

wherein the gate insulating layer comprises the first contact hole disposed on the first active pattern and the second contact hole disposed on the second active pattern.

10. The method of claim 7, wherein the first temperature is 10°

Celsius to 50°

Celsius higher than the second temperature.

11. The method of claim 7, further comprising forming a first electrode of a display element connected to a drain area of the first active pattern.

12. A method of manufacturing a display apparatus, the method comprising:

forming the TFT substrate according to the manufacturing method of claim 7; and

forming a display element on the TFT substrate.

13. A method of manufacturing a display apparatus, the method comprising:

forming the TFT substrate according to the manufacturing method of claim 8; and

forming a display element on the TFT substrate.

14. A method of manufacturing a display apparatus, the method comprising:

forming the TFT substrate according to the manufacturing method of claim 9; and

forming a display element on the TFT substrate.

15. A display apparatus comprising:

a pixel disposed on a substrate, the pixel comprising;

a first TFT disposed on the substrate, wherein the first TFT comprises a first active pattern with a first hydrogen density and a first gate electrode overlapping a portion of the first active pattern;

a second TFT disposed on the substrate, wherein the second TFT comprises a second active pattern with a second hydrogen density that is higher than the first hydrogen density and a second gate electrode overlapping a portion of the second active pattern; and

an organic light-emitting diode (OLED) connected to the first TFT.

16. The display apparatus of claim 15, wherein the second TFT transfers a data signal in synchronization with a scan signal, and the first TFT outputs a driving current corresponding to the data signal.

17. The display apparatus of claim 15, wherein the pixel further comprises a gate insulating layer disposed between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode,

wherein the gate insulating layer comprises a first contact hole disposed on the first active pattern and a second contact hole disposed on the second active pattern.

18. The display apparatus of claim 17, wherein a first electrode of the pixel is connected to a drain area of the first active pattern.

19. The display apparatus of claim 18, wherein the first contact hole is filled with a conductive material and the first electrode is disposed on the conductive material.

20. The display apparatus of claim 18, wherein the OLED comprises an emission layer disposed on the first electrode, and

wherein a second electrode is disposed on the emission layer.