COMMON SOURCE ARCHITECTURE FOR SPLIT GATE MEMORY
First Claim
1. A memory system, comprising:
- a plurality of split gate non-volatile memory (NVM) cells, wherein;
each split gate NVM cell has a control gate and a source,the plurality of split gate NVM cells are arranged into a plurality of program sectors,each program sector of the plurality of sectors includes a subset of split gate NVM cells of the plurality of split gate NVM cells, andeach program sector has the control gates of its subset of split gate NVM cells physically shorted together; and
a program/erase circuit configured toerase a first erase sector that comprises the plurality of program sectors byapplying an erase voltage to the control gates of each of the split gate NVM cells of the first erase sector, which includes each subset of split gate NVM cells of the plurality of program sectors; and
program a selected program sector of the plurality of program sectors by simultaneously;
applying a programming signal to the control gates of the split gate NVM cells of the selected program sector,applying a non-programming signal to the control gates of the split gate NVM cells of program sectors of the plurality of program sectors that are not selected for programming, andapplying a source voltage to the sources of each of the split gate NVM cells of the first erase sector.
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Abstract
A memory system has an array of split gate non-volatile NVM cells that are in program sectors and the program sectors make up one or more erase sectors. The control gate of cells in a program sector are physically connected. A program/erase circuit programs a selected program sector by applying a programming signal to the control gates of the split gate memory cells of the selected program sector while applying a non-programming signal to the control gates of program sectors not selected for programming, that erases an erase sector comprising a plurality of the program sectors by contemporaneously applying an erase voltage to the control gates of the split gate NVM cells of the erase sector, wherein during the applying the programming signal, the program/erase circuit applies a source voltage to the sources of each of the split gate NVM cells of the erase sector.
5 Citations
20 Claims
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1. A memory system, comprising:
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a plurality of split gate non-volatile memory (NVM) cells, wherein; each split gate NVM cell has a control gate and a source, the plurality of split gate NVM cells are arranged into a plurality of program sectors, each program sector of the plurality of sectors includes a subset of split gate NVM cells of the plurality of split gate NVM cells, and each program sector has the control gates of its subset of split gate NVM cells physically shorted together; and a program/erase circuit configured to erase a first erase sector that comprises the plurality of program sectors by applying an erase voltage to the control gates of each of the split gate NVM cells of the first erase sector, which includes each subset of split gate NVM cells of the plurality of program sectors; and program a selected program sector of the plurality of program sectors by simultaneously; applying a programming signal to the control gates of the split gate NVM cells of the selected program sector, applying a non-programming signal to the control gates of the split gate NVM cells of program sectors of the plurality of program sectors that are not selected for programming, and applying a source voltage to the sources of each of the split gate NVM cells of the first erase sector. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of operating a memory system having an array comprising a plurality of split gate non-volatile memory (NVM) cells, each split gate NVM cell having a source and a control gate, the method comprising:
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selecting a program sector for programming while deselecting other program sectors, wherein the plurality of split gate NVM cells are grouped into a plurality of program sectors, each program sector comprising a set of split gate NVM cells, the plurality of program sectors are grouped into a plurality of erase sectors, each erase sector comprising a set of program sectors that form a superset of split gate NVM cells, and the selected program sector is included in a first erase sector; programming the selected program sector by simultaneously; applying a program voltage to the control gates of the set of split gate NVM cells of the selected program sector, applying a non-program voltage to the control gates of each set of split gate NVM cells of the deselected program sectors included in the first erase sector, and applying a source program signal to the sources of the superset of split gate NVM cells of the first erase sector, which includes the sets of split gate NVM cells of the selected program sector and the deselected program sectors; and erasing the first erase sector by applying a control gate erase signal to the control gates of the superset of split gate NVM cells of the first erase sector and a source erase signal to the sources of the superset of split gate NVM cells of the first erase sector. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A memory system, comprising:
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an array of split gate non-volatile memory (NVM) cells, wherein; the array comprises a first program sector and a second program sector; the first program sector and the second program sector are comprised in a first erase sector; each split gate NVM cell has a control gate and a source used in program and erase; the control gates of the split gate NVM cells of the first program sector are physically connected together; and the control gates of the split gate NVM cells of the second program sector are physically connected together; a control gate decoder; a first gate driver coupled to the control gate decoder; a second gate driver coupled to the control gate decoder; and a first source driver coupled to the sources of the split gate NVM cells of the first erase sector, wherein, when programming the first program sector; the control gate decoder enables the first gate driver to provide a program signal to the control gates of the split gate NVM cells of the first program sector; the control gate decoder enables the second gate driver to provide a non-program signal to the control gates of the split gate NVM cells of the second program sector; and the first source driver provides a programming signal to the sources of the split gate NVM cells of the first erase sector that comprises the first and second program sectors. - View Dependent Claims (19, 20)
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Specification