METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD
First Claim
Patent Images
1. A method comprising:
- applying a composition on a substrate to form a coating film on the substrate; and
heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450°
C. and 800°
C. or lower, to form a film on the substrate,wherein the composition comprises a compound comprising an aromatic ring.
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Abstract
A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.
18 Citations
10 Claims
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1. A method comprising:
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applying a composition on a substrate to form a coating film on the substrate; and heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450°
C. and 800°
C. or lower, to form a film on the substrate,wherein the composition comprises a compound comprising an aromatic ring. - View Dependent Claims (2, 3, 4, 5)
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6. A pattern-forming method comprising:
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applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate; heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450°
C. and 800°
C. or lower, to form a resist underlayer film on the upper face side of the substrate,forming a resist pattern on an upper face side of the resist underlayer film; and forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern, wherein the composition comprises a compound comprising an aromatic ring. - View Dependent Claims (7, 8, 9, 10)
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Specification