LIGHT-EMITTING DIODE CHIP

• US 20160315238A1
• Filed: 04/22/2016
• Published: 10/27/2016
• Est. Priority Date: 02/17/2015
• Status: Abandoned Application

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Chien, Wei-Chen, Cheng, Chih-Chin, Kuo, Yu-Chen, Lai, Teng-Hsien, Kang, Kai-Shun, Lan, Yan-Ting, Huang, Jing-En, Chen, Cheng-Pin, Tseng, Chih-Hung
• Application Number:
  US15/135,574
• Publication Number:
  US 20160315238A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

Claims

1. A light-emitting diode chip, comprising

a semiconductor device layer comprising a first-type doped semiconductor layer, a light-emitting layer, and a second-type doped semiconductor layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer;

a first electrode electrically connected to the first-type doped semiconductor layer;

a current-blocking layer disposed on the second-type doped semiconductor layer;

a current-spreading layer, wherein the current-blocking layer is sandwiched between the current-spreading layer and the second-type doped semiconductor layer, the current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface, and the inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface; and

a second electrode disposed on the current-spreading layer and electrically connected to the second-type doped semiconductor layer.

2. The light-emitting diode chip according to claim 1, wherein the first inclined surface and the first surface form an acute angle θ

1 within a material of the current-blocking layer.

3. The light-emitting diode chip according to claim 2, wherein 10°

≦

θ

1≦

80°

.

4. The light-emitting diode chip according to claim 2, wherein 30°

≦

θ

1≦

50°

.

5. The light-emitting diode chip according to claim 1, wherein the current-blocking layer comprises:

at least one first current-blocking sub-layer; and

at least one second current-blocking sub-layer, wherein the at least one first current-blocking sub-layer and the at least one second current-blocking sub-layer are stacked alternately.

6. The light-emitting diode chip according to claim 1, wherein the current-blocking layer comprises a main body and an extending portion extended from the main body, the second electrode is electrically connected to the second-type doped semiconductor layer through the current-spreading layer, the second electrode comprises a bond pad and a finger portion extended from the bond pad, the bond pad is disposed on the main body, the finger portion is disposed on the extending portion, and a part of the finger portion is not overlapped with the extending portion.

7. The light-emitting diode chip according to claim 1, further comprising an insulating layer disposed between the first electrode and the first-type doped semiconductor layer.

8. The light-emitting diode chip according to claim 7, wherein the insulating layer has a third surface facing the semiconductor device layer, a fourth surface back onto the semiconductor device layer, and a second inclined surface, the second inclined surface is connected between the third surface and the fourth surface, and the second inclined surface is tilted with respect to the third surface and the fourth surface.

9. The light-emitting diode chip according to claim 8, wherein the third surface and the second inclined surface form an acute angle within a material of the insulating layer.

10. The light-emitting diode chip according to claim 7, wherein the first electrode comprises a bond portion and a branched portion extended from the bond portion, and the bond portion is disposed on the insulating layer.

11. The light-emitting diode chip according to claim 10, wherein a portion of the first-type doped semiconductor layer on which the insulating layer is not disposed forms a region, and the branched portion is disposed in the region.

12. The light-emitting diode chip according to claim 10, wherein a portion of the first-type doped semiconductor layer on which the insulating layer is not disposed forms a plurality of regions separated from each other, a part of the branched portion is disposed in the plurality of regions, and the plurality of regions is arranged along an extending direction of the branched portion.

13. A light-emitting diode chip, comprising:

a semiconductor device layer comprising a first-type doped semiconductor layer, a light-emitting layer, and a second-type doped semiconductor layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer;

a first electrode electrically connected to the first-type doped semiconductor layer;

a current-blocking layer disposed on the second-type doped semiconductor layer, wherein the current-blocking layer comprises;

at least one first current-blocking sub-layer; and

at least one second current-blocking sub-layer, wherein the at least one first current-blocking sub-layer and the at least one second current-blocking sub-layer are stacked alternately;

a current-spreading layer, wherein the current-blocking layer is disposed between the current-spreading layer and the second-type doped semiconductor layer; and

a second electrode electrically connected to the second-type doped semiconductor layer.

14. The light-emitting diode chip according to claim 13, wherein a refractive index of the at least one first current-blocking sub-layer is different from a refractive index of the at least one second current-blocking sub-layer.

15. The light-emitting diode chip according to claim 13, wherein the current-blocking layer comprises a main body and an extending portion extended from the main body, the second electrode is electrically connected to the second-type doped semiconductor layer through the current-spreading layer, the second electrode comprises a bond pad and a finger portion extended from the bond pad, the bond pad is disposed on the main body, the finger portion is disposed on the extending portion, and a partial region of the finger portion is not overlapped with the extending portion.

16. The light-emitting diode chip according to claim 13, further comprising an insulating layer disposed between the first electrode and the first-type doped semiconductor layer.

17. The light-emitting diode chip according to claim 16, wherein the insulating layer has a third surface facing the semiconductor device layer, a fourth surface back onto the semiconductor device layer, and a second inclined surface, the second inclined surface is connected between the third surface and the fourth surface, the second inclined surface is tilted with respect to the third surface and the fourth surface, and the third surface and the second inclined surface form an acute angle within a material of the insulating layer.

18. The light-emitting diode chip according to claim 16, wherein the first electrode comprises a bond portion and a branched portion extended from the bond portion, and the bond portion is disposed on the insulating layer.

19. The light-emitting diode chip according to claim 18, wherein a portion of the first-type doped semiconductor layer on which the insulating layer is not disposed forms a region, and the branched portion is disposed in the region.

20. The light-emitting diode chip according to claim 18, wherein a portion of the first-type doped semiconductor layer on which the insulating layer is not disposed forms a plurality of regions separated from each other, a partial region of the branched portion is disposed in the plurality of regions, and the plurality of regions is arranged along an extending direction of the branched portion.