INSERTION OF ELEMENTS WITHIN BORON CARBIDE

• US 20160318810A1
• Filed: 04/08/2016
• Published: 11/03/2016
• Est. Priority Date: 04/08/2015
• Status: Active Grant

• Current Assignee: The Government Of The United States As Represented By The Secretary Of The Navy
• Original Assignee: The Government Of The United States Of America, As Represented By The Secretary Of The Navy
• Inventors: Goswami, Ramasis, Qadri, Syed B., Kolel-Veetil, Manoj K., Bernstein, Noam, Gamache, Raymond M.
• Granted Patent: US 9,950,961 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C04B 2235/3821 Boron carbides
• CPC Class Codes: C04B 2235/401 Alkaline earth metals
• CPC Class Codes: C04B 2235/402 Aluminium
• CPC Class Codes: C04B 2235/428 Silicon
• CPC Class Codes: C04B 2235/761 Unit-cell parameters, e.g. lattice constants
• CPC Class Codes: C04B 35/563 based on boron carbide
• CPC Class Codes: C04B 35/62615 High energy or reactive ball milling

Abstract

A method and resulting composition made by: providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

Claims

1. A composition comprising:

boron carbide;

wherein at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with a dopant selected from silicon, aluminum, magnesium, and beryllium.

2. The composition of claim 1, wherein the dopant is silicon.

3. The composition of claim 2, wherein the silicon atom replaces a carbon atom of the boron carbide.

4. The composition of claim 1, wherein at least one out of three of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

5. The composition of claim 4, wherein the dopant is silicon.

6. The composition of claim 4, wherein the silicon atom replaces a carbon atom of the boron carbide.

7. A method comprising:

providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and

ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

8. The method of claim 7, wherein the dopant is silicon.

9. The method of claim 8, wherein the silicon atom replaces a carbon atom of the boron carbide.

10. The method of claim 7, wherein at least one out of three of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

11. The method of claim 10, wherein the dopant is silicon.

12. The method of claim 11, wherein the silicon atom replaces a carbon atom of the boron carbide.