SUBSTRATE BIAS FOR FIELD-EFFECT TRANSISTOR DEVICES
First Claim
Patent Images
1. A radio-frequency (RF) device comprising:
- a field-effect transistor (FET) implemented over a substrate layer;
an electrical connection implemented to provide a substrate bias node associated with the substrate layer; and
a non-grounding circuit connected to the substrate bias node to adjust RF performance of the FET.
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Abstract
Substrate bias for field-effect transistor (FET) devices. In some embodiments, a radio-frequency (RF) device can include a FET implemented over a substrate layer, and an electrical connection implemented to provide a substrate bias node associated with the substrate layer. The RF device can further include a non-grounding circuit connected to the substrate bias node to adjust RF performance of the FET. In some embodiments, the electrical connection can include a pattern of one or more conductive features in electrical contact with the substrate layer.
16 Citations
117 Claims
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1. A radio-frequency (RF) device comprising:
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a field-effect transistor (FET) implemented over a substrate layer; an electrical connection implemented to provide a substrate bias node associated with the substrate layer; and a non-grounding circuit connected to the substrate bias node to adjust RF performance of the FET. - View Dependent Claims (16, 17, 18, 19, 21, 23, 24, 25, 26, 27, 28, 29, 50, 51, 52, 53, 54)
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2-15. -15. (canceled)
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20. (canceled)
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22. (canceled)
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30-49. -49. (canceled)
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55-72. -72. (canceled)
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73. A radio-frequency (RF) switch device comprising:
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a die including a substrate layer; an RF core implemented on the die, the RF core including a plurality of field-effect transistors (FETs) configured to provide switching functionality; an energy management (EM) core implemented on the die, the EM core configured to facilitate the switching functionality of the RF core; and a pattern of one or more conductive features in electrical contact with the substrate layer of the die to provide a substrate node, the pattern implemented relative to a circuit element associated with the RF switch device.
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74-115. -115. (canceled)
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116. A radio-frequency (RF) module comprising:
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a packaging substrate configured to receive a plurality of devices; and a switching device mounted on the packaging substrate, the switching device including a field-effect transistor (FET) implemented over a substrate layer, the switching device further including an electrical connection implemented to provide a substrate bias node associated with the substrate layer, the switching device further including a non-grounding circuit connected to the substrate bias node to adjust RF performance of the FET.
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117-125. -125. (canceled)
Specification