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Metal Gate Scheme for Device and Methods of Forming

  • US 20160322471A1
  • Filed: 06/04/2015
  • Published: 11/03/2016
  • Est. Priority Date: 04/30/2015
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a first source/drain region and a second source/drain region in a substrate; and

    forming a gate structure between the first source/drain region and the second source/drain region and over the substrate, the gate structure comprising;

    a gate dielectric layer over the substrate,a work function tuning layer over the gate dielectric layer,a first metal over the work function tuning layer,an adhesion layer over the first metal, anda second metal over the adhesion layer, the second metal being different from the first metal.

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