VAPOR DEPOSITION APPARATUS

• US 20160322574A1
• Filed: 07/08/2016
• Published: 11/03/2016
• Est. Priority Date: 11/19/2012
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: JANG, Choel-Min, KIM, Jin-Kwang, SONG, Seung-Yong, HUH, Myung-Soo, JUNG, Suk-Won, KIM, Jae-Hyun, KIM, Sung-Chul
• Granted Patent: US 10,446,753 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01B 13/30 Drying; Impregnating H01B13/32 takes precedence
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Claims

1. A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus comprising:

a supply unit that injects at least one raw material gas towards the substrate; and

a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

2. The vapor deposition apparatus as claimed in claim 1, further comprising a chamber to accommodate the substrate, the supply unit, and the blocking gas flow generation unit therein.

3. The vapor deposition apparatus as claimed in claim 1, wherein the blocking gas flow generation unit injects towards the supply unit a blocking gas that contains an inert gas.

4. The vapor deposition apparatus as claimed in claim 1, wherein the blocking gas flow generation unit injects towards the supply unit the blocking gas that contains an inert gas when the substrate is not located in a region corresponding to the supply unit.

5. The vapor deposition apparatus as claimed in claim 1, wherein the blocking gas flow generation unit includes a plurality of slits to inject the blocking gas.

6. The vapor deposition apparatus as claimed in claim 1, further comprising a driving unit to move the substrate.

7. The vapor deposition apparatus as claimed in claim 6, wherein the substrate is placed on a stage and the driving unit is connected to the stage to move the stage.

8. The vapor deposition apparatus as claimed in claim 6, wherein the driving unit is disposed to have a reciprocal movement along guide rails.

9. The vapor deposition apparatus as claimed in claim 6, wherein the driving unit includes a first supporting member, a second supporting member, and a separation space that is defined as a space between the first supporting member and the second supporting member.

10. The vapor deposition apparatus as claimed in claim 9, wherein the first supporting member and the second supporting member are disposed to reciprocally move along guide rails.

11. The vapor deposition apparatus as claimed in claim 9, wherein the blocking gas flow generation unit is disposed to correspond to the separation space while the driving unit is moving.

12. The vapor deposition apparatus as claimed in claim 1, wherein the supply unit injects the raw material gas towards ground.

13. The vapor deposition apparatus as claimed in claim 1, wherein the supply unit includes a first injection unit that injects a first raw material gas, a second injection unit that injects a second raw material gas, and an exhaust unit.

14. The vapor deposition apparatus as claimed in claim 13, wherein the first injection unit injects the first raw material gas in a radical type form to the substrate by generating plasma at a same time as when the first raw material gas is injected.

15-20. -20. (canceled)