Method for Realizing Heterogeneous III-V Silicon Photonic Integrated Circuits
First Claim
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1. A method of producing a photonic integrated circuit, the method comprising:
- integrating at least one III-V hybrid device on a source substrate having at least a top silicon waveguide layer; and
transferring, by transfer-printing or by flip-chip bonding, the III-V hybrid device and at least part of the top silicon waveguide layer of the source substrate to a semiconductor-on-insulator host substrate.
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Abstract
A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.
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Citations
15 Claims
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1. A method of producing a photonic integrated circuit, the method comprising:
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integrating at least one III-V hybrid device on a source substrate having at least a top silicon waveguide layer; and transferring, by transfer-printing or by flip-chip bonding, the III-V hybrid device and at least part of the top silicon waveguide layer of the source substrate to a semiconductor-on-insulator host substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A photonic integrated circuit comprising a host substrate being a semiconductor-on-insulator or dielectric-on-insulator host substrate;
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a III-V hybrid device and silicon layer, the III-V hybrid device being integrated with the silicon layer, and the III-V hybrid device and silicon layer having been transfer-printed or flip-chip bonded on the host substrate together. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification