Semiconductor Structures and Methods of Manufacturing the Same
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Accused Products
Abstract
A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.
7 Citations
16 Claims
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1-10. -10. (canceled)
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11. A semiconductor device, comprising:
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a conductive structure on a substrate; a first insulating layer on the substrate over the conductive structure; an insulation pattern structure on the first insulating layer and overlapping the conductive structure, a width of the insulation pattern structure being gradually reduced, as a height of the insulation pattern structure becomes higher; and a conductive pattern on the first insulating layer over the insulating pattern structure. - View Dependent Claims (12, 13, 14, 15)
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16-18. -18. (canceled)
Specification