SPLIT POLY CONNECTION VIA THROUGH-POLY-CONTACT (TPC) IN SPLIT-GATE BASED POWER MOSFETS
First Claim
1. A transistor device, comprising:
- a semiconductor substrate;
a plurality of trenches formed in the semiconductor substrate, each trench being lined with an insulating material along sidewalls inside the trench, each trench having a bottom conductive material in lower portions of the trench and a top conductive material in an upper portion of the trench, wherein the bottom conductive material and the top conductive material are separated by an inter-electrode insulating layer; and
a plurality of contact structures formed in the plurality of trenches respectively in an area outside of an active region of the device, each contact structure being filled with conductive materials, wherein each contact structure penetrates through a portion of the top conductive material and the inter-electrode insulating layer beneath the top conductive material to reach the bottom electrode.
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Accused Products
Abstract
Embodiments of the present disclosure provide a contact structure in a split-gate trench transistor device for electrically connecting the top electrode to the bottom electrode inside the trench. The transistor device comprises a semiconductor substrate and one or more trenches formed in the semiconductor substrate. The trenches are lined with insulating materials along the sidewalls inside the trenches. Each trench has a bottom electrode in lower portions of the trench and a top electrode in its upper portions. The bottom electrode and the top electrode are separated by an insulating material. A contact structure filled with conductive materials is formed in each trench in an area outside of an active region of the device to connect the top electrode and the bottom electrode. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
8 Citations
5 Claims
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1. A transistor device, comprising:
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a semiconductor substrate; a plurality of trenches formed in the semiconductor substrate, each trench being lined with an insulating material along sidewalls inside the trench, each trench having a bottom conductive material in lower portions of the trench and a top conductive material in an upper portion of the trench, wherein the bottom conductive material and the top conductive material are separated by an inter-electrode insulating layer; and a plurality of contact structures formed in the plurality of trenches respectively in an area outside of an active region of the device, each contact structure being filled with conductive materials, wherein each contact structure penetrates through a portion of the top conductive material and the inter-electrode insulating layer beneath the top conductive material to reach the bottom electrode. - View Dependent Claims (2, 3, 4, 5)
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Specification