LIGHT EMITTING DIODE

• US 20160329461A1
• Filed: 04/22/2016
• Published: 11/10/2016
• Est. Priority Date: 02/17/2015
• Status: Abandoned Application

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Huang, Yi-Ru, Chuang, Tung-Lin, Lan, Yan-Ting, Hsu, Sheng-Tsung, Shen, Chih-Ming, Huang, Jing-En, Lai, Teng-Hsien, Mai, Hung-Chuan, Huang, Kuan-Chieh, Ting, Shao-Ying, Chen, Cheng-Pin, Chien, Wei-Chen, Cheng, Chih-Chin, Tseng, Chih-Hung
• Application Number:
  US15/135,573
• Publication Number:
  US 20160329461A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Claims

1. A light emitting diode, comprising:

a first-type semiconductor layer;

an emitting layer

a second-type semiconductor layer, wherein the emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer;

a first electrode, electrically connected to the first-type semiconductor layer;

a second electrode, electrically connected to the second-type semiconductor layer; and

a Bragg reflector structure, wherein the first electrode and the second electrode are located on the same side of the Bragg reflector structure;

a conductive layer, disposed between the Bragg reflector structure and the second-type semiconductor layer; and

a plurality of insulation patterns, disposed between the conductive layer and the second-type semiconductor layer, wherein an area of the conductive layer outside the insulation patterns contacts the second-type semiconductor layer, and each of the insulation patterns has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer and an inclined surface connecting the first surface and the second surface and inclined with respect to the first surface and the second surface.

2. The light emitting diode as recited in claim 1, wherein an acute angle θ

1 is formed between the inclined surface and the first surface in a material of each of the insulation patterns.

3. The light emitting diode as recited in claim 2, wherein 10°

≦

θ

1≦

80°

.

4. The light emitting diode as recited in claim 2, wherein 30°

≦

θ

1≦

50°

.

5. The light emitting diode as recited in claim 1, wherein each of the insulation patterns comprises a plurality of first sub-layers and a plurality of second sub-layers, and the first sub-layers and the second sub-layers are stacked alternately.

6. The light emitting diode as recited in claim 5, wherein a material of each of the first sub-layers is different from a material of each of the second sub-layers.

7. The light emitting diode as recited in claim 5, wherein a material of each of the first sub-layers is the same as a material of each of the second sub-layers, and a density of each of the first sub-layers is different from a density of each of the second sub-layers.

8. The light emitting diode as recited in claim 1, wherein a reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, the emitting layer is adapted to emit a beam, the beam has a peak wavelength within an emission wavelength range, and X is the peak wavelength of the emission wavelength range.

9. The light emitting diode as recited in claim 1, wherein the first-type semiconductor layer comprises a first portion and a second portion, the emitting layer is stacked on the first portion, the second portion extends out of an area of the emitting layer from the first portion, so as to electrically connect with the first electrode, and the first electrode, the emitting layer, the second-type semiconductor layer, and the second electrode are located on a first side of the first-type semiconductor layer.

10. The light emitting diode as recited in claim 1, wherein the Bragg reflector structure is located on the first side of the first-type semiconductor layer, the Bragg reflector structure is at least located between the second electrode and the second-type semiconductor layer, the Bragg reflector structure comprises a plurality of through holes, and the second electrode is filled into the through holes to electrically connect with the second-type semiconductor layer.

11. The light emitting diode as recited in claim 10, wherein the insulation patterns correspond to the through holes.

12. A light emitting diode, comprising:

a first-type semiconductor layer;

an emitting layer

a second-type semiconductor layer, wherein the emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer;

a first electrode, electrically connected to the first-type semiconductor layer;

a second electrode, electrically connected to the second-type semiconductor layer; and

a Bragg reflector structure, wherein the first electrode and the second electrode are located on the same side of the Bragg reflector structure;

a conductive layer, disposed between the Bragg reflector structure and the second-type semiconductor layer; and

a plurality of insulation patterns, disposed between the conductive layer and the second-type semiconductor layer, wherein an area of the conductive layer outside the insulation patterns contacts the second-type semiconductor layer, each of the insulation patterns comprises a plurality of first sub-layers and a plurality of second sub-layers, and the first sub-layers and the second sub-layers are alternately stacked.

13. The light emitting diode as recited in claim 12, wherein a material of each of the first sub-layers is different from a material of each of the second sub-layers.

14. The light emitting diode as recited in claim 12, wherein a material of each of the first sub-layers is the same as a material of each of the second sub-layers, and a density of each of the first sub-layers is different from a density of each of the second sub-layers.

15. The light emitting diode as recited in claim 12, wherein a reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, the emitting layer is adapted to emit a beam, the beam has a peak wavelength within an emission wavelength range, and X is the peak wavelength of the emission wavelength range.

16. The light emitting diode as recited in claim 12, wherein the first-type semiconductor layer comprises a first portion and a second portion, the emitting layer is stacked on the first portion, the second portion extends out of an area of the emitting layer from the first portion, so as to electrically connect with the first electrode, and the first electrode, the emitting layer, the second-type semiconductor layer, and the second electrode are located on a first side of the first-type semiconductor layer.

17. The light emitting diode as recited in claim 16, wherein the Bragg reflector structure is located on the first side of the first-type semiconductor layer, the Bragg reflector structure is at least located between the second electrode and the second-type semiconductor layer, the Bragg reflector structure comprises a plurality of through holes, and the second electrode is filled into the through holes to electrically connect with the second-type semiconductor layer.

18. The light emitting diode as recited in claim 17, wherein the insulation patterns correspond to the through holes.