METHOD OF FORMING SEMICONDUCTOR STRUCTURE

• US 20160336187A1
• Filed: 06/12/2015
• Published: 11/17/2016
• Est. Priority Date: 05/15/2015
• Status: Abandoned Application

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Liou, En-Chiuan, Tung, Yu-Cheng
• Application Number:
  US14/737,507
• Publication Number:
  US 20160336187A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method of forming a semiconductor structure includes following steps. First of all, a plurality of mandrels is formed on a target layer. Next, a plurality of first liner is formed adjacent to two sides of the mandrels. Then, a plurality of second liners is formed adjacent to two sides of the first liners. After these, a plurality of third liners is formed adjacent to two sides of the second liners. Finally, the mandrels and the second liners are simultaneously removed.

Claims

1. A method of forming a semiconductor structure, comprising:

forming a plurality of mandrels on a target layer;

forming a first material layer covering the mandrels;

performing an etching back process to remove the first material layer on top surfaces of the mandrels;

after the etching back process, performing a chemical mechanical polishing process to further remove a portion of the first material layer to form a plurality of first liners adjacent to two sides of the mandrels;

forming a plurality of second liners adjacent to two sides of the first liners;

forming a plurality of third liners adjacent to two sides of the second liners; and

simultaneously removing the mandrels and the second liners.

2. The method of forming a semiconductor structure according to claim 1, further comprising:

etching the mandrels to reduce a width of the mandrels before the first liners are formed.

3. The method of forming a semiconductor structure according to claim 1, wherein the mandrels have a same pitch.

4. The method of forming a semiconductor structure according to claim 1, wherein the mandrels have different pitches.

5. The method of forming a semiconductor structure according to claim 4, wherein at least two of the first liners adjacent to each other merge with each other.

6. The method of forming a semiconductor structure according to claim 4, wherein at least two of the second liners adjacent to each other merge with each other.

7. The method of forming a semiconductor structure according to claim 4, wherein at least two of the third liners adjacent to each other merge with each other.

8. The method of forming a semiconductor structure according to claim 1, wherein the mandrels, the first liners, the second liners and the third liners have different widths.

11. The method of forming a semiconductor structure according to claim 1, further comprising:

forming a second material layer covering the mandrels and the first liners;

removing a portion of second material layer to form the second liners.

12. The method of forming a semiconductor structure of claim 11, further comprising:

forming a third material layer covering the mandrels, the first liners and the second liners; and

removing a portion of third material layer to form the third liners.

13. The method of forming a semiconductor structure according to claim 1, further comprising:

forming a second material layer covering the mandrels and the first liners;

forming a third material layer covering the second material layer; and

removing a portion of second material layer and a portion of the third material layer simultaneously to form the second liners and the third liners.

14. The method of forming a semiconductor structure according to claim 13, wherein each of the third liners is formed on a portion of each of the second liners.

15. The method of forming a semiconductor structure according to claim 13, wherein each of the third liners does not directly contact the target layer.

16. The method of forming a semiconductor structure according to claim 14, wherein the portion of each of the second liners is not removed while the mandrels and the second liners are simultaneously removed.

17. The method of forming a semiconductor structure according to claim 16, further comprising:

etching the target layer by using the first liners, the portion of each of the second liners and the third liners as a mask.

18. The method of forming a semiconductor structure according to claim 1, further comprising:

etching the target layer by using the first liners and the third liners as a mask.

19. The method of forming a semiconductor structure according to claim 1, wherein the target layer comprises a semiconductor layer, a conductive layer or a non-conductive layer.

9-10. -10. (canceled)