THIN FILM TRANSISTOR, FABRICATING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE

• US 20160336349A1
• Filed: 09/17/2014
• Published: 11/17/2016
• Est. Priority Date: 04/22/2014
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: WANG, Dongfang, CHEN, Jiangbo
• Granted Patent: US 9,754,970 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention provides a thin film transistor, a fabricating method thereof, an array substrate and a display device. The fabricating method of the thin film transistor of the present invention comprises: forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film; and heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer.

Claims

1. A fabricating method of a thin film transistor, comprising steps of:

forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film; and

heating the substrate subjected to the above step, crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer.

2. The fabricating method of a thin film transistor according to claim 1, wherein the step of forming an inducing layer film and an oxide active layer film in contact therewith on a substrate comprises:

forming the inducing layer film and the oxide active layer film successively on the substrate.

3. The fabricating method of a thin film transistor according to claim 2, wherein before forming the inducing layer film and the oxide active layer film successively on the substrate, the fabricating method further comprises:

forming a pattern including a gate by a patterning process on the substrate.

4. The fabricating method of a thin film transistor according to claim 2, wherein the step of crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer comprises:

heating the substrate on which the inducing layer film and the oxide active layer film are successively formed, such that the oxide active layer film is crystallized through inducement of the inducing layer film to form a crystalline oxide active layer film, and the inducing layer film becomes an oxide inducing layer; and

forming a pattern including the crystalline oxide active layer by a patterning process on the substrate subjected to the above step.

5. The fabricating method of a thin film transistor according to claim 2, wherein the step of crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer comprises:

forming a patterned oxide active layer film by a patterning process on the substrate on which the inducing layer film and the oxide active layer film are successively formed; and

heating the substrate subjected to the above step, such that the patterned oxide active layer film is crystallized through inducement of the inducing layer film to form a crystalline oxide active layer, and the inducing layer film becomes an oxide inducing layer.

6. The fabricating method of a thin film transistor according to claim 1, wherein the step of forming an inducing layer film and an oxide active layer film in contact therewith on a substrate comprises:

forming the oxide active layer film and the inducing layer film successively on the substrate.

7. The fabricating method of a thin film transistor according to claim 6, wherein the step of crystallizing the oxide active layer film through inducement of the inducing layer film to form a crystalline oxide active layer comprises:

heating the substrate on which the oxide active layer film and the inducing layer film are successively formed, such that the oxide active layer film is crystallized through inducement of the inducing layer film to form a crystalline oxide active layer film, and the inducing layer film becomes an oxide inducing layer film; and

forming a pattern including the crystalline oxide active layer and the oxide inducing layer by a patterning process on the substrate subjected to the above step.

8. The fabricating method of a thin film transistor according to claim 7, wherein after forming the crystalline oxide active layer and the oxide inducing layer, the fabricating method further comprises:

forming a pattern including a gate by a patterning process.

9. The fabricating method of a thin film transistor according to claim 1, wherein the inducing layer film is made of metal having a hexagonal lattice structure or hexagonal lattice derived structure, and

the step of forming the crystalline oxide active layer comprises:

putting the substrate formed with the inducing layer film and the oxide active layer film in an atmosphere of oxygen-containing gas and heating the substrate, such that the oxide active layer film becomes the crystalline oxide active layer film under action of the inducing layer film.

10. The fabricating method of a thin film transistor according to claim 9, wherein the metal having a hexagonal lattice structure or hexagonal lattice derived structure is any one of aluminum, magnesium and titanium.

11. The fabricating method of a thin film transistor according to claim 9, wherein a heating temperature ranges from 450°

C. to 700°

C. and the oxygen content of the oxygen-containing gas ranges from 5% to 40% in the step of forming the crystalline oxide active layer.

12. The fabricating method of a thin film transistor according to claim 1, wherein the inducing layer film is made of insulating non-metal having a hexagonal lattice structure or hexagonal lattice derived structure.

13. The fabricating method of a thin film transistor according to claim 12, wherein the insulating non-metal having a hexagonal lattice structure or hexagonal lattice derived structure is any one of aluminum oxide, magnesium oxide, gadolinium oxide, zirconium oxide and titanium oxide.

26. A display device, comprising an array substrate, the array substrate comprising thin film transistors fabricated by using the fabricating method of claim 1.

14. A fabricating method of a thin film transistor, comprising steps of:

forming an inducing layer film and an oxide active layer film in contact therewith on a substrate, the oxide active layer film being provided above or below the inducing layer film, and forming a patterned inducing layer film and a patterned oxide active layer film by a patterning process; and

heating the substrate subjected to the above step, crystallizing the patterned oxide active layer film through inducement of the patterned inducing layer film to form a crystalline oxide active layer.

15. The fabricating method of a thin film transistor according to claim 14, wherein the step of forming a patterned inducing layer film and a patterned oxide active layer film comprises:

forming the inducing layer film and the oxide active layer film successively on the substrate; and

forming the patterned inducing layer film and the patterned oxide active layer film by a single patterning process on the substrate subjected to the above step.

16. The fabricating method of a thin film transistor according to claim 15, wherein before forming the inducing layer film on the substrate, the fabricating method further comprises:

forming a pattern including a gate by a patterning process on the substrate.

17. The fabricating method of a thin film transistor according to claim 14, wherein the step of forming a patterned inducing layer film and a patterned oxide active layer film comprises:

forming the oxide active layer film and the inducing layer film successively on the substrate; and

forming the patterned inducing layer film and the patterned oxide active layer film by a single patterning process on the substrate subjected to the above step.

18. The fabricating method of a thin film transistor according to claim 17, wherein after forming a pattern of the crystalline oxide active layer, the fabricating method further comprises:

forming a pattern including a gate by a patterning process.

19. The fabricating method of a thin film transistor according to claim 14, wherein the inducing layer film is made of metal having a hexagonal lattice structure or hexagonal lattice derived structure, and

the step of forming the crystalline oxide active layer comprises:

putting the substrate formed with the patterned inducing layer film and the patterned oxide active layer film in an atmosphere of oxygen-containing gas and heating the substrate, such that the patterned oxide active layer film becomes the crystalline oxide active layer under action of the patterned inducing layer film, and the patterned inducing layer film becomes an oxide inducing layer

20. The fabricating method of a thin film transistor according to claim 19, wherein the metal having a hexagonal lattice structure or hexagonal lattice derived structure is any one of aluminum, magnesium and titanium.

21. The fabricating method of a thin film transistor according to claim 19, wherein a heating temperature ranges from 450°

C. to 700°

C. and the oxygen content of the oxygen-containing gas ranges from 5% to 40% in the step of forming the crystalline oxide active layer.

22. The fabricating method of a thin film transistor according to claim 14, wherein the inducing layer film is made of insulating non-metal having a hexagonal lattice structure or hexagonal lattice derived structure.

23. The fabricating method of a thin film transistor according to claim 22, wherein the insulating non-metal having a hexagonal lattice structure or hexagonal lattice derived structure is any one of aluminum oxide, magnesium oxide, gadolinium oxide, zirconium oxide and titanium oxide.

24. (canceled)

25. (canceled)