DISPLAY SUBSTRATE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE
First Claim
1. A method for manufacturing a display substrate, comprising a step of forming a plurality of thin film transistors (TFTs), wherein the method further comprises steps of:
- forming a lattice matching layer on a substrate so as to deposit aluminium nitride (AlN) on the lattice matching layer;
depositing an AlN layer on the lattice matching layer by low-temperature pulse magnetron sputtering; and
forming on the AlN layer gallium nitride (GaN) light-emitting diodes (LEDs) each including an n-type GaN layer, a multilayered quantum well structure and a p-type GaN layer and corresponding to one of the TFTs.
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Abstract
The present disclosure provides a display substrate, its manufacturing method, and a display device. The method includes a step of forming a plurality of TFTs. The method further includes steps of: forming a lattice matching layer on a substrate so as to deposit AlN thereon; depositing an AlN layer on the lattice matching layer by low-temperature pulse magnetron sputtering; and forming on the AlN layer GaN LEDs each including an n-type GaN layer, a multilayered quantum well structure and a p-type GaN layer and corresponding to one of the TFTs.
13 Citations
20 Claims
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1. A method for manufacturing a display substrate, comprising a step of forming a plurality of thin film transistors (TFTs), wherein the method further comprises steps of:
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forming a lattice matching layer on a substrate so as to deposit aluminium nitride (AlN) on the lattice matching layer; depositing an AlN layer on the lattice matching layer by low-temperature pulse magnetron sputtering; and forming on the AlN layer gallium nitride (GaN) light-emitting diodes (LEDs) each including an n-type GaN layer, a multilayered quantum well structure and a p-type GaN layer and corresponding to one of the TFTs. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A display substrate, comprising a plurality of thin film transistors (TFTs), and further comprising:
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a lattice matching layer; an aluminium nitride (AlN) layer formed on the lattice matching layer; and gallium nitride (GaN) light-emitting diodes (LEDs) formed on the AlN layer and each including an n-type GaN layer, a multilayered quantum well structure and a p-type GaN layer and corresponding to one of the TFTs. - View Dependent Claims (17, 18, 19, 20)
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Specification