HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
First Claim
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1. A device structure, comprising:
- a substrate having a superlattice structure formed thereon, the superlattice structure comprising;
a silicon material layer;
a first silicon germanium material layer comprising between about 20% and about 40% germanium; and
a second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement.
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Abstract
Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.
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20 Claims
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1. A device structure, comprising:
a substrate having a superlattice structure formed thereon, the superlattice structure comprising; a silicon material layer; a first silicon germanium material layer comprising between about 20% and about 40% germanium; and a second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement. - View Dependent Claims (2, 3)
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4. A device structure, comprising:
a superlattice structure, comprising; a silicon material layer; a first silicon germanium material layer comprising between about 20% and about 40% germanium; and a second silicon germanium material layer comprising between about 50% and about 80% germanium, wherein the silicon material layer, the first silicon germanium material layer, and the second silicon germanium layer are disposed in a stacked arrangement. - View Dependent Claims (5, 6)
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7. A device structure, comprising:
a substrate having a superlattice structure formed thereon, the superlattice structure comprising; one or more silicon material layers; one or more silicon germanium material layers comprising between about 20% and about 40% germanium; and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement. - View Dependent Claims (8, 9)
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10. A device structure, comprising:
a superlattice structure, comprising; one or more silicon material layers; one or more silicon germanium material layers comprising between about 20% and about 40% germanium; and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement. - View Dependent Claims (11, 12, 13, 14)
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15. A device structure, comprising:
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a substrate having a superlattice structure formed thereon, the superlattice structure comprising; one or more silicon material layers; one or more silicon germanium material layers comprising between about 20% and about 40% germanium; and a buried oxide layer, wherein the silicon material layers, the silicon germanium material layers, and the buried oxide layer are disposed in a stacked arrangement; source/drain regions formed on the substrate; and a metal gate structure formed over the superlattice structure. - View Dependent Claims (16, 17)
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18. A device structure, comprising:
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a substrate; a buried oxide layer disposed on and in contact with the substrate; a silicon layer or silicon germanium layer comprising between about 20% and about 40% germanium disposed on the buried oxide layer; source/drain regions formed on the substrate; and a metal gate structure formed over the silicon layer or silicon germanium layer. - View Dependent Claims (19, 20)
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Specification