METHODS OF FORMING PATTERNS, METHODS OF MANUFACTURING A MAGNETIC MEMORY DEVICE USING THE METHODS OF FORMING PATTERNS, AND MAGNETIC MEMORY DEVICES MANUFACTURED USING THE SAME
First Claim
Patent Images
1. A method of forming patterns, the method comprising:
- forming an etch target layer on a substrate;
patterning the etch target layer to form patterns;
forming an insulating layer on sidewalls of the patterns using a first ion beam generated from a first ion source; and
removing the insulating layer using a second ion beam generated from a second ion source,wherein each of the first and second ion sources includes an insulating source, andwherein the insulating source includes at least one of oxygen or nitrogen.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming patterns includes forming an etch target layer on a substrate, patterning the etch target layer to form patterns, forming an insulating layer on sidewalls of the patterns using a first ion beam generated from a first ion source, and removing the insulating layer using a second ion beam generated from a second ion source, wherein each of the first and second ion sources includes an insulating source, and wherein the insulating source includes at least one of oxygen or nitrogen.
-
Citations
34 Claims
-
1. A method of forming patterns, the method comprising:
-
forming an etch target layer on a substrate; patterning the etch target layer to form patterns; forming an insulating layer on sidewalls of the patterns using a first ion beam generated from a first ion source; and removing the insulating layer using a second ion beam generated from a second ion source, wherein each of the first and second ion sources includes an insulating source, and wherein the insulating source includes at least one of oxygen or nitrogen. - View Dependent Claims (2, 3, 7, 8, 11, 12, 13, 15, 16, 18, 20)
-
-
4-6. -6. (canceled)
-
9-10. -10. (canceled)
-
14. (canceled)
-
17. (canceled)
-
19. (canceled)
-
21. (canceled)
-
22. A method of manufacturing a magnetic memory device, the method comprising:
-
forming a magnetic tunnel junction layer on a substrate; patterning the magnetic tunnel junction layer to form magnetic tunnel junction patterns; forming an insulating layer on sidewalls of the magnetic tunnel junction patterns using a first ion beam generated from a first ion source; and removing the insulating layer using a second ion beam generated from a second ion source, wherein each of the first and second ion sources includes an insulating source, and wherein the insulating source includes at least one of oxygen or nitrogen. - View Dependent Claims (23, 25, 26)
-
-
24. (canceled)
-
27-28. -28. (canceled)
-
29. A method of forming patterns, the method comprising:
-
forming an etch target layer on a substrate; patterning the etch target layer to form patterns; irradiating a first ion beam from a first ion source toward the patterns, such that a first insulating source in the first ion source interacts with residue on the patterns to form an insulating layer on sidewalls of the patterns; and removing the insulating layer from the sidewalls of the patterns, wherein the first insulating source includes at least one of oxygen or nitrogen. - View Dependent Claims (30, 32, 33)
-
-
31. (canceled)
-
34-35. -35. (canceled)
Specification