SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
First Claim
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1. A semiconductor memory device, comprising:
- a memory cell array including a plurality of pages;
a peripheral circuit suitable for performing a program operation and a read operation on the memory cell array; and
a control logic suitable for controlling the peripheral circuit to apply first and second pass voltages respectively to first and second word lines adjacent to a selected word line during a program verify operation or the read operation.
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Abstract
A semiconductor memory device includes a memory cell array including a plurality of pages; a peripheral circuit suitable for performing a program operation and a read operation on the memory cell array; and a control logic suitable for controlling the peripheral circuit to apply first and second pass voltages respectively to first and second word lines adjacent to a selected word line during a program verify operation or the read operation.
9 Citations
20 Claims
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1. A semiconductor memory device, comprising:
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a memory cell array including a plurality of pages; a peripheral circuit suitable for performing a program operation and a read operation on the memory cell array; and a control logic suitable for controlling the peripheral circuit to apply first and second pass voltages respectively to first and second word lines adjacent to a selected word line during a program verify operation or the read operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A program operation method of a semiconductor memory device, comprising:
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applying a program voltage to a word line selected from a plurality of word lines coupled to a memory cell array including a plurality of pages; and performing a program verify operation on a page coupled to the selected word line, wherein the program verify operation includes; applying a verify voltage to the selected word line; and applying first and second pass voltages respectively to first and second word lines adjacent to the selected word line. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A read operation method of a semiconductor memory device, comprising:
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applying a read voltage to a word line selected from a plurality of word lines coupled to a memory cell array including a plurality of pages; and applying first and second pass voltages respectively to first and second word lines adjacent to the selected word line. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification