METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING HIGH SPEED EPITAXIAL LIFT-OFF AND TEMPLATE FOR III-V DIRECT GROWTH AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME

• US 20160343810A1
• Filed: 09/15/2015
• Published: 11/24/2016
• Est. Priority Date: 05/19/2015
• Status: Active Grant

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: GEUM, Daemyeong, KIM, Sanghyeon, PARK, Min Su, CHOI, Won Jun
• Granted Patent: US 10,014,216 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/185 Joining of semiconductor bodies for junction formation
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 29/66219 with a heterojunction, e.g. resonant tunneling diodes [RTD]
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Disclosed is a method for manufacturing a semiconductor device, which includes providing a template having a first substrate and a patterned first III-V group compound layer located on the first substrate, forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth, forming a second III-V group compound layer on the sacrificial layer by epitaxial growth, bonding a second substrate made of silicon onto the second III-V group compound layer, and separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

Claims

1. A method for manufacturing a semiconductor device, comprising:

providing a template having a first substrate and a patterned first III-V group compound layer disposed on the first substrate;

forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth;

forming a second III-V group compound layer on the sacrificial layer by epitaxial growth;

bonding a second substrate made of silicon onto the second III-V group compound layer; and

separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the bonding of a second substrate includes directly bonding the second III-V group compound layer and the second substrate to each other.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the bonding of a second substrate includes:

forming an adhesive layer on at least one of the second III-V group compound layer and the second substrate; and

bonding the second III-V group compound layer and the second substrate to each other by using the adhesive layer.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the adhesive layer includes metal or oxide.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the separating the second III-V group compound layer and the second substrate from the template includes removing the sacrificial layer by using a hydrophilic etching solution containing hydrogen fluoride (HF).

6. The method for manufacturing a semiconductor device according to claim 5, wherein the etching solution further contains at least one of isopropyl alcohol and acetone.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the providing of a template includes:

forming a sacrificial layer on a support substrate having an III-V group compound;

forming an III-V group compound on the sacrificial layer on the support substrate by epitaxial growth;

patterning the sacrificial layer and the III-V group compound on the support substrate to form the patterned first III-V group compound layer; and

transferring the patterned first III-V group compound layer onto the first substrate.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the forming of the patterned first III-V group compound layer includes etching the sacrificial layer and the III-V group compound on the support substrate by using an etching solution containing phosphoric acid (H₃PO₄).

9. The method for manufacturing a semiconductor device according to claim 7, wherein the transferring onto the first substrate includes:

bonding the support substrate, the sacrificial layer on the support substrate and the patterned first III-V group compound layer to the first substrate so that the patterned first III-V group compound layer contacts the first substrate; and

removing the sacrificial layer on the support substrate after the bonding to separate the support substrate from the first substrate.

10. A semiconductor device, comprising:

a second III-V group compound layer grown from a patterned first III-V group compound layer by epitaxial growth; and

a substrate having silicon and bonded to the second III-V group compound layer.

11. The semiconductor device according to claim 10,

wherein the second III-V group compound layer is directly bonded onto the second substrate.

12. The semiconductor device according to claim 10, further comprising an adhesive layer located between the second III-V group compound layer and the second substrate.

13. The semiconductor device according to claim 12,

wherein the adhesive layer includes metal or oxide.