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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING HIGH SPEED EPITAXIAL LIFT-OFF AND TEMPLATE FOR III-V DIRECT GROWTH AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME

  • US 20160343810A1
  • Filed: 09/15/2015
  • Published: 11/24/2016
  • Est. Priority Date: 05/19/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • providing a template having a first substrate and a patterned first III-V group compound layer disposed on the first substrate;

    forming a sacrificial layer on the patterned first III-V group compound layer by epitaxial growth;

    forming a second III-V group compound layer on the sacrificial layer by epitaxial growth;

    bonding a second substrate made of silicon onto the second III-V group compound layer; and

    separating the second III-V group compound layer and the second substrate from the template by removing the sacrificial layer.

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