SYSTEMS AND METHODS FOR ANNEALING SEMICONDUCTOR STRUCTURES
First Claim
1. A method comprising:
- providing an energy-converting structure that is proximate a semiconductor structure and is configured to convert microwave radiation to thermal radiation;
providing a heat reflecting structure that is located between the semiconductor structure and the energy-converting structure and substantially transparent to microwave radiation and substantially reflective to thermal radiation; and
providing microwave radiation to the energy-converting structure, for the microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to and the semiconductor structure.
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Accused Products
Abstract
Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.
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Citations
20 Claims
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1. A method comprising:
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providing an energy-converting structure that is proximate a semiconductor structure and is configured to convert microwave radiation to thermal radiation; providing a heat reflecting structure that is located between the semiconductor structure and the energy-converting structure and substantially transparent to microwave radiation and substantially reflective to thermal radiation; and providing microwave radiation to the energy-converting structure, for the microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to and the semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A system comprising:
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an energy-converting structure that is proximate a semiconductor structure and is configured to convert microwave radiation to thermal radiation; a heat reflecting structure that is located between the semiconductor structure and the energy-converting structure and is substantially transparent to microwave radiation and substantially reflective to thermal radiation; and a microwave source for generating microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to the semiconductor structure. - View Dependent Claims (13, 14, 15, 16)
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17. A system comprising:
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an energy-converting structure that is located proximate a semiconductor structure and comprises at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide; a heat reflecting structure that is located between the semiconductor structure and the energy converting structure and is substantially transparent to microwave radiation and is substantially reflective to radiation; and a microwave source configured to generate microwave radiation toward the energy-converting structure, for the microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to the semiconductor structure. - View Dependent Claims (18, 19, 20)
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Specification