SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate; and
a trench gate extending from a front surface of the semiconductor substrate toward a deep portion of the semiconductor substrate,wherein the semiconductor substrate comprises;
a drift region of a first conductive type, wherein the drift region is in contact with the trench gate;
a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate;
a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and
a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.
-
Citations
7 Claims
-
1. A semiconductor device comprising:
-
a semiconductor substrate; and a trench gate extending from a front surface of the semiconductor substrate toward a deep portion of the semiconductor substrate, wherein the semiconductor substrate comprises; a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification