SEMICONDUCTOR LIGHT-EMITTING DEVICE

• US 20160351754A1
• Filed: 04/04/2016
• Published: 12/01/2016
• Est. Priority Date: 06/01/2015
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Chan Mook Lim
• Inventors: LIM, Chan Mook, KIM, Myeong Ha
• Application Number:
  US15/089,683
• Publication Number:
  US 20160351754A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light-emitting device having improved light extraction efficiency provided by a reflector including a separation layer. The separation layer may be interposed between first and second Bragg layers including one or more pairs of refractive layers having different refractive indices, the first pairs being stacked on one side of the separation layer and the second pairs being stacked on an opposing side of the separation layer.

Claims

1. A semiconductor light-emitting device comprising:

a substrate comprising;

a first surface; and

a second surface opposing the first surface;

a light-emitting structure disposed on the first surface of the substrate, the light-emitting structure comprising;

a first conductivity-type semiconductor layer;

an active layer; and

a second conductivity-type semiconductor layer; and

a reflector comprising;

a first Bragg layer;

a separation layer; and

a second Bragg layer,

wherein the first Bragg layer, the separation layer, and the second Bragg layer are sequentially disposed on the second surface of the substrate,

wherein the first Bragg layer comprises a first plurality of layers alternately stacked, each of the first plurality of layers having a refractive index different from refractive indices of each other layer among the first plurality of layers,

wherein the second Bragg layer comprises a second plurality of layers alternately stacked, each of the second plurality of layers having a refractive index different from refractive indices of each other layer among the second plurality of layers, and

wherein a thickness of the separation layer is greater than thicknesses of each layer among the first plurality of layers and the second plurality of layers.

2. The semiconductor light-emitting device of claim 1, wherein the separation layer is disposed between the first Bragg layer and the second Bragg layer in a direction perpendicular to the second surface of the substrate.

3. The semiconductor light-emitting device of claim 1, wherein the first Bragg layer comprises:

a first layer having a first refractive index; and

a second layer having a second refractive index greater than the first refractive index,

wherein the second Bragg layer comprises;

a third layer having a third refractive index; and

a fourth layer having a fourth refractive index greater than the third refractive index, and

wherein a refractive index of the separation layer is less than the second refractive index and the fourth refractive index.

4. The semiconductor light-emitting device of claim 3, wherein the separation layer is composed of a material that is the same as at least one of a material of which the first layer is composed and a material of which the third layer is composed.

5. The semiconductor light-emitting device of claim 3, wherein the separation layer is directly disposed between the second layer and the fourth layer in contact with the second layer and the fourth layer.

6. The semiconductor light-emitting device of claim 1, wherein a thickness of the separation layer is in a range of 0.8 λ

/n to 1.5 λ

/n,

wherein λ

is a wavelength of light and n is a refractive index.

7. The semiconductor light-emitting device claim 1, wherein the thicknesses of each layer among the first plurality of layers and the second plurality of layers is in a range of 0.2 λ

/n to 0.6 λ

/n,

wherein λ

is a wavelength of light and n is a refractive index.

8. The semiconductor light-emitting device of claim 1, wherein the thicknesses of each layer among the first plurality of layers and the second plurality of layers are equal.

9. The semiconductor light-emitting device of claim 1, wherein the thicknesses of each layer among the first plurality of layers and the second plurality of layers increases as a distance from the substrate of each layer among the first plurality of layers and the second plurality of layers increases.

10. The semiconductor light-emitting device of claim 9, wherein a quantity of the first plurality of layers forming the first Bragg layer is greater than a quantity of the second plurality of layers forming the second Bragg layer.

11. The semiconductor light-emitting device of claim 1, wherein the thicknesses of each layer among the first plurality of layers and the second plurality of layers decreases as a distance from the substrate of each layer among the first plurality of layers and the second plurality of layers increases.

12. The semiconductor light-emitting device of claim 11, wherein a quantity of the first plurality of layers forming the first Bragg layer is less than a quantity of the second plurality of layers forming the second Bragg layer.

13. The semiconductor light-emitting device of claim 1, wherein a refractive index of the separation layer in the range of 1 to 1.5.

14. The semiconductor light-emitting device of claim 1, wherein the first Bragg layer is configured to reflect light within a first wavelength band and the second Bragg is configured to reflect light within a second wavelength band different from the first wavelength band.

15. A semiconductor light-emitting device, comprising:

a light-emitting structure comprising;

a first conductivity-type semiconductor layer;

an active layer; and

a second conductivity-type semiconductor layer; and

a reflector disposed on a surface of the light-emitting structure, the reflector comprising;

a plurality of Bragg layers; and

at least one separation layer interposed between two layers among the plurality of Bragg layers, the separation layer having a thickness greater than 0.8 λ

/n, wherein λ

is a wavelength of light and n is a refractive index.

16. The semiconductor light-emitting device of claim 15, wherein each layer among the plurality of Bragg layers comprises:

a first layer having a first refractive index; and

a second layer having a second refractive index greater than the first refractive index, and

wherein the thickness of the separation layer is greater than thicknesses of each layer among the first layer and the second layer.

17. The semiconductor light-emitting device of claim 16, wherein a first difference between the refractive index of the separation layer and the first refractive index is less than a second difference between the refractive index of the separation layer and the second refractive index.

18. The semiconductor light-emitting device of claim 16, wherein the separation layer is disposed between second layers of the two layers among the plurality of Bragg layers.

19-20. -20. (canceled)

21. A semiconductor light-emitting device comprising:

a light-emitting structure configured to emit light;

a reflector disposed opposing a rear surface the light-emitting structure, the reflector configured to reflect light, which is emitted towards the reflector by the light-emitting structure, towards the light-emitting structure,

wherein the reflector comprises;

a first Bragg layer;

a second Bragg layer; and

a separation layer interposed between the first Bragg layer and the second Bragg layer.

22. The semiconductor light-emitting device of claim 21, wherein the first Bragg layer comprises at least one first pair of refractive layers, and

wherein the second Bragg layer comprises at least one second pair of refractive layers.

23-25. -25. (canceled)