LIGHT EMITTING DEVICE
First Claim
1. A light emitting device comprising:
- a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
a first current blocking layer disposed on the light emitting structure;
a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer;
a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer and the light emitting structure;
a first electrode electrically connected to the first conductive semiconductor layer and overlapped with the first current blocking layer in the vertical direction;
a second electrode electrically connected to the second conductive semiconductor layer and overlapped with the second current blocking layer in the vertical direction;
a through electrode disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer; and
an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer,wherein the through electrode is electrically connected to the first electrode and electrically separated from the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer by the insulation layer.
1 Assignment
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Accused Products
Abstract
Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.
3 Citations
20 Claims
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1. A light emitting device comprising:
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a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first current blocking layer disposed on the light emitting structure; a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer; a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer and the light emitting structure; a first electrode electrically connected to the first conductive semiconductor layer and overlapped with the first current blocking layer in the vertical direction; a second electrode electrically connected to the second conductive semiconductor layer and overlapped with the second current blocking layer in the vertical direction; a through electrode disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer; and an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer, wherein the through electrode is electrically connected to the first electrode and electrically separated from the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer by the insulation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light emitting device comprising:
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a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first current blocking layer disposed on the light emitting structure; a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer; a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer and the light emitting structure; a first electrode electrically connected to the first conductive semiconductor layer and overlapped with the first current blocking layer in the vertical direction; a second electrode electrically connected to the second conductive semiconductor layer and overlapped with the second current blocking layer in the vertical direction; a through electrode electrically connected to the first electrode and disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer; and an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer, wherein a portion of the insulation layer is opened to form an open region, and the light-transmitting conductive layer is exposed through the open region, and wherein the insulation layer has a constant thickness on light-transmitting conductive layer except for at the open region, and a height of the insulation layer is greater at regions corresponding to at least one of the first current blocking layer or the second current blocking layer than the other regions. - View Dependent Claims (16, 17, 18)
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19. A light emitting device comprising:
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a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first current blocking layer disposed on the light emitting structure; a second current blocking layer disposed on the light emitting structure and electrically separated from the first current blocking layer; a light-transmitting conductive layer disposed on the first current blocking layer, the second current blocking layer and the light emitting structure; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a through electrode electrically connected to the first electrode and disposed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer; and an insulation layer disposed between the first electrode and the first current blocking layer and between the second electrode and the second current blocking layer, wherein at least one of the first current blocking layer and the second current blocking layer is a distributed Bragg reflector (DBR) or an omni-directional reflector (ODR). - View Dependent Claims (20)
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Specification