SEMICONDUCTOR LASER DEVICE

• US 20160352075A1
• Filed: 08/12/2016
• Published: 12/01/2016
• Est. Priority Date: 03/11/2014
• Status: Abandoned Application

• Current Assignee: Furukawa Electric Company Limited
• Original Assignee: Furukawa Electric Company Limited
• Inventors: IWAMI, Masayuki, ISHII, Hirotatsu, IWAI, Norihiro, MATSUDA, Takeyoshi, KASUKAWA, Akihiko, ISHIKAWA, Takuya, KAWAKITA, Yasumasa, KAJI, Eisaku
• Application Number:
  US15/235,685
• Publication Number:
  US 20160352075A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/201 including two or more compounds , e.g. alloys H01L29/2006 takes precedence
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: H01L 29/7784 with delta or planar doped donor layer H01L29/7785 takes precedence
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/868 PIN diodes
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/036 characterised by their crystalline structure or particular orientation of the crystalline planes
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01S 5/2224 semi-insulating semiconductors
• CPC Class Codes: H01S 5/227 Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/309 doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure barriers in quantum wells per se H01S5/3407
• CPC Class Codes: H01S 5/32 comprising PN junctions, e.g. hetero- or double- heterostructures H01S5/34, H01S5/36 take precedence
• CPC Class Codes: H01S 5/32358 containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
• CPC Class Codes: H01S 5/32366 (In)GaAs with small amount of N
• CPC Class Codes: H01S 5/34313 : with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/3434 : with a well layer comprising at least both As and P as V-compounds
• CPC Class Codes: H01S 5/34373 : based on InGa(Al)AsP

Abstract

A semiconductor laser device includes an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

Claims

1. A semiconductor laser device comprising an active layer including a well layer and a barrier layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group, wherein

a V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer, and

a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer contains Al.

2. The semiconductor laser device according to claim 1, wherein the V group element other than As is any one of N, P and Sb or a combination thereof.

3. The semiconductor laser device according to claim 1, wherein the III-V group semiconductor crystal containing As as a primary component is AlGaInAs or AlGaInNAs.

4. The semiconductor laser device according to claim 1, wherein the III-V group semiconductor crystal containing As as a primary component is AlAs or AlGaAs.

5. The semiconductor laser device according to claim 4, wherein In has been introduced at a concentration of 0.1 to 1% into a III group site of the III-V group semiconductor crystal in at least one of the well layer and the barrier layer.

6. The semiconductor laser device according to claim 1, wherein an n-type dopant has been added to the active layer.

7. The semiconductor laser device according to claim 6, wherein the concentration of the n-type dopant is 1×

10¹⁸ cm<sup>−

3</sup> or less and 1×

10¹⁵ cm<sup>−

3</sup> or more.

8. The semiconductor laser device according to claim 1, wherein the V group element other than As has been introduced into the well layer.

9. The semiconductor laser device according to claim 8, wherein the V group element other than As has been introduced into the barrier layer.

10. The semiconductor laser device according to claim 1, wherein the composition of the barrier layer contains Al.

11. The semiconductor laser device according to claim 10, wherein the composition of the well layer contains Al.

12. The semiconductor laser device according to claim 7, wherein the concentration of the n-type dopant in the active layer is lower than that in another n-type semiconductor layer in the semiconductor laser device.