×

CAPACITANCE REDUCTION FOR PILLAR STRUCTURED DEVICES

  • US 20160356901A1
  • Filed: 11/26/2014
  • Published: 12/08/2016
  • Est. Priority Date: 11/26/2014
  • Status: Active Grant
First Claim
Patent Images

1. An apparatus, comprising:

  • a first layer including an n+ dopant or a p+ dopant;

    an intrinsic layer grown or deposited above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, wherein cavity regions are defined between the pillars;

    a second layer deposited on a periphery of the pillars thereby forming coated pillars, wherein the second layer is substantially absent on the planar portion of the intrinsic layer between the coated pillars, wherein the second layer includes a n+ dopant when the first layer includes a p+ dopant, wherein the second layer includes a p+ dopant when the first layer includes a n+ dopant; and

    a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×