METHODS OF OPERATING MEMORY
First Claim
1. A method of operating a memory, comprising:
- applying a first potential to a control gate of a memory cell of a first string of series-connected memory cells connected to a particular data line;
applying a second potential to a control gate of a memory cell of a second string of series-connected memory cells connected to the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells; and
generating a data value indicative of a level of a property sensed from the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells and while applying the second potential to the control gate of the memory cell of the second string of series-connected memory cells, wherein the property is selected from a group consisting of a voltage and a current.
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Accused Products
Abstract
Methods of operating memory include generating a data value indicative of a level of a property sensed from a data line while applying potentials to control gates of memory cells of more than one string of series-connected memory cells connected to that data line. Methods of operating memory further include generating data values indicative of levels of a property sensed from data lines while applying potentials to control gates of memory cells of strings of series-connected memory cells connected to those data lines, performing a logical operation on a set of data values comprising those data values, and determining a potential to be applied to control gates of different memory cells of those strings of series-connected memory cells in response to an output of the logical operation on the set of data values.
57 Citations
20 Claims
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1. A method of operating a memory, comprising:
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applying a first potential to a control gate of a memory cell of a first string of series-connected memory cells connected to a particular data line; applying a second potential to a control gate of a memory cell of a second string of series-connected memory cells connected to the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells; and generating a data value indicative of a level of a property sensed from the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells and while applying the second potential to the control gate of the memory cell of the second string of series-connected memory cells, wherein the property is selected from a group consisting of a voltage and a current. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of operating a memory, comprising:
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applying a first potential to a control gate of a memory cell of a first string of series-connected memory cells connected to a particular data line; applying a second potential to a control gate of a memory cell of a second string of series-connected memory cells connected to a different data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells; generating a first data value indicative of a level of a property sensed from the particular data line while applying the first potential to the control gate of the memory cell of the first string of series-connected memory cells, wherein the property is selected from a group consisting of a voltage and a current; generating a second data value indicative of a level of the property sensed from the different data line while applying the second potential to the control gate of the memory cell of the second string of series-connected memory cells; performing a logical operation on a set of data values comprising the first data value and the second data value; and determining a potential to be applied to a control gate of a different memory cell of the first string of series-connected memory cells in response to an output of the logical operation on the set of data values. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of operating a memory, comprising:
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applying a first potential to a particular access line of a first plurality of access lines, wherein the particular access line of the first plurality of access lines is connected to a control gate of a respective memory cell of each string of series-connected memory cells of a first plurality of strings of series-connected memory cells, and wherein each string of series-connected memory cells of the first plurality of strings of series-connected memory cells is connected to a respective data line of a plurality of data lines while applying the first potential to the particular access line of the first plurality of access lines; applying a second potential to a particular access line of a second plurality of access lines while applying the first potential to the particular access line of the first plurality of access lines, wherein the particular access line of the second plurality of access lines is connected to a control gate of a respective memory cell of each string of series-connected memory cells of a second plurality of strings of series-connected memory cells, and wherein each string of series-connected memory cells of the second plurality of strings of series-connected memory cells is connected to a respective data line of the plurality of data lines while applying the second potential to the particular access line of the second plurality of access lines; generating a respective data value indicative of a level of a property sensed from each data line of the plurality of data lines while applying the first potential to the particular access line of the first plurality of access lines and while applying the second potential to the particular access line of the second plurality of access lines, wherein the property is selected from a group consisting of a voltage and a current; performing a logical operation on a set of data values comprising each respective data value for the plurality of data lines; determining a third potential and a fourth potential in response to an output of the logical operation on the set of data values; applying the third potential to a different access line of the first plurality of access lines, wherein the different access line of the first plurality of access lines is connected to a control gate of a respective memory cell of each string of series-connected memory cells of the first plurality of strings of series-connected memory cells, and wherein each string of series-connected memory cells of the first plurality of strings of series-connected memory cells is connected to its respective data line of the plurality of data lines while applying the third potential to the different access line of the first plurality of access lines; and applying the fourth potential to a different access line of the second plurality of access lines, wherein the different access line of the second plurality of access lines is connected to a control gate of a respective memory cell of each string of series-connected memory cells of the second plurality of strings of series-connected memory cells, and wherein each string of series-connected memory cells of the second plurality of strings of series-connected memory cells is connected to its respective data line of the plurality of data lines while applying the fourth potential to the different access line of the second plurality of access lines. - View Dependent Claims (18, 19, 20)
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Specification