POWER SEMICONDUCTOR MODULE

• US 20160358895A1
• Filed: 06/30/2014
• Published: 12/08/2016
• Est. Priority Date: 02/11/2014
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: NAKASHIMA, Junichi, TAMADA, Yoshiko, NAKAYAMA, Yasushi, HAYASHIDA, Yukimasa
• Granted Patent: US 9,941,255 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48111 the wire connector extending above another semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/49433 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/049 the other leads being perpendicular to the base
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 25/07 the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 29/1602 Diamond
• CPC Class Codes: H01L 29/1608 : Silicon carbide
• CPC Class Codes: H01L 29/2003 : Nitride compounds
• CPC Class Codes: H01L 29/41 : characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/861 : Diodes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

Claims

1. A power semiconductor module comprising:

positive/negative arms as a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements;

a positive-side electrode, a negative-side electrode, and an AC electrode that are connected to the positive arm and the negative arm; and

a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode and the AC electrode,

each of the positive-side electrode, the negative-side electrode, and the AC electrode including a parallel surface portion arranged to be parallel to a surface of the substrate on which the wiring pattern is formed,

the substrate d the parallel surface portion of each of the positive-side electrode, the negative-side electrode and the AC electrode being insulated from each other with a sealing material interposed therebetween, and

the positive-side electrode, the negative-side electrode, and the AC electrode being insulated from one another, and arranged such that two of the positive-side electrode, the negative-side electrode and the AC electrode face each other at a distance from each other.

2. The power semiconductor module according to claim 1, wherein

each of the positive-side electrode and the negative-side electrode includes a vertical surface portion arranged to be vertical to the surface of the substrate on which the wiring pattern is formed,

the vertical surface portion of the positive-side electrode is arranged to face and to be parallel to the vertical surface portion of the negative-side electrode, and

the parallel surface portion of the AC electrode is arranged to face and to be parallel to the parallel surface portion of the positive-side electrode and the parallel surface portion of the negative-side electrode.

3. The power semiconductor module according to claim 1, wherein

each of the positive-side electrode, the negative-side electrode, and the AC electrode includes:

a terminal portion connected to an external circuit; and

a plurality of branch electrode portions each connected to the wiring pattern and branched from the parallel surface portion,

each of the branch electrode Portions has a flat plane portion that is coplanar to the parallel surface portion,

the substrate is insulated from the parallel surface portion of each of the branch electrode portions,

the parallel surface portion of each of the branch electrode portions is arranged on the substrate,

the branch electrode portion of the positive-side electrode and the branch electrode portion of the AC electrode are insulated from each other, are at least partially identical in shape, and are arranged to face each other, and

the branch electrode portion of the negative-side electrode and the branch electrode portion of the AC electrode are insulated from each other, are at least partially identical in shape, and are arranged to face each other.

4. The power semiconductor module according to claim 3, wherein

a plurality of the substrates are provided,

a plurality of the branch electrode portions are provided corresponding to the plurality of substrates, and

a distance from the terminal portion of the positive-side electrode through the branch electrode portion of the positive-side electrode to the wiring pattern is equal to a distance from the terminal portion of the negative-side electrode through the branch electrode portion of the negative-side electrode to the wiring pattern.

5. The power semiconductor module according to claim 3, wherein

each of the plurality of the branch electrode portions included in each of the positive-side electrode, the negative-side electrode and the AC electrode is formed in a V-shape extending as a starting point from a longer side of a corresponding one of the positive-side electrode, the negative-side electrode and the AC electrode.

6. The power semiconductor module according to claim 3, wherein

the parallel surface portion is formed in a rectangular shape that has a long side portion on which the branch electrode portion is arranged.

7. The power semiconductor module according to claim 3, wherein

the terminal portion of the AC electrode is arranged such that one side of the terminal portion of the AC electrode faces each of the terminal portion of the positive-side electrode and the terminal portion of the negative-side electrode.

8. The power semiconductor module according to claim 7, wherein

each of the positive-side electrode and the negative-side electrode is provided with a slit, a distance from the terminal portion of the positive-side electrode to the wiring pattern and a distance from the terminal portion of the negative-side electrode to the wiring pattern are equal, and the wiring patterns are connected in parallel.

9. The power semiconductor module according to claim 7, wherein

the terminal portion of the AC electrode is arranged o extend between the positive arm and the negative arm.

10. The power semiconductor module according to claim 3 wherein

the power semiconductor module has an outer shape having a rectangular plane, and

the terminal portion of the positive-side electrode and the terminal portion of the negative-side electrode are arranged in a center portion in the rectangular plane.

12. The power semiconductor module according to claim 8, wherein

a distance between the terminal portion of the positive-side electrode and the terminal portion of the AC electrode is equal to a distance between the terminal portion of the negative-side electrode and the terminal portion of the AC electrode.

13. The power semiconductor module according to claim 1, wherein

a plurality of the substrates are provided as the positive arm and the negative arm.

14. The power semiconductor module according to claim 1, further comprising a diode bonded to the wiring pattern so as to be connected in anti-parallel to the self-arc-extinguishing type semiconductor element, wherein

the positive arm and the negative arm are formed by series connection of parallel circuits each formed of the self-arc-extinguishing type semiconductor element and the diode.

15. The power semiconductor module according to claim 14, wherein

the diode is formed of a wide gap semiconductor that is wider in band gap than silicon.

16. The power semiconductor module according to claim 1, wherein

the self-arc-extinguishing type semiconductor element is formed of a wide gap semiconductor that is wider in band gap than silicon.

17. The power semiconductor module according to claim 15, wherein

the wide gap semiconductor is one of silicon carbide, a gallium nitride material, and a diamond.

11. A power semiconductor module comprising:

positive/negative arms as a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements;

a positive-side electrode, a negative-side electrode, and an AC electrode that are connected to the positive arm and the negative arm;

a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode and the AC electrode; and

a terminal portion included in each of the positive-side electrode, the negative-side electrode and the AC electrode, the terminal portion being connected to an external circuit,

the power semiconductor module having an outer shape having a rectangular plane, and

the terminal portion of the positive-side electrode and the terminal portion of the negative-side electrode being arranged in a center portion in the rectangular plane.