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SELF-ALIGNED FLASH MEMORY DEVICE WITH WORD LINE HAVING REDUCED HEIGHT AT OUTER EDGE OPPOSITE TO GATE STACK

  • US 20160358928A1
  • Filed: 06/03/2015
  • Published: 12/08/2016
  • Est. Priority Date: 06/03/2015
  • Status: Active Grant
First Claim
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1. A flash memory device, comprising:

  • a gate stack comprising a control gate separated from a floating gate by a control gate dielectric;

    an erase gate disposed on a first side of the gate stack; and

    a word line disposed on a second side of the gate stack that is opposite the first side, wherein the word line has a height that monotonically increases from an outer side opposite to the gate stack to an inner side closer to the gate stack;

    wherein the word line comprises a ledge at the outer side of the word line with a planar upper surface, and a tilted portion at the inner side of the word line.

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