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SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

  • US 20160359018A1
  • Filed: 08/15/2016
  • Published: 12/08/2016
  • Est. Priority Date: 10/21/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating a split gate in a semiconductor device, said method comprising:

  • forming a first dielectric region along the sidewalls of a trench-like cavity in said semiconductor device;

    forming a first gate electrode region within said cavity;

    forming a second dielectric region in said cavity;

    etching back said second dielectric region to form a concave surface; and

    forming a second gate electrode region within said cavity.

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