ELECTRONIC DEVICE PACKAGE AND FABRICATING METHOD THEREOF
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Accused Products
Abstract
Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.
17 Citations
40 Claims
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1-20. -20. (canceled)
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21. A semiconductor device comprising:
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a semiconductor die comprising a first die surface, a second die surface opposite the first die surface, and side die surfaces connecting the first and second die surfaces, where the first die surface comprises a bond pad; an encapsulant covering at least one of the side die surfaces and comprising a first encapsulant surface and a second encapsulant surface opposite the first encapsulant surface; a conductive via passing through at least the encapsulant between the first encapsulant surface and the second encapsulant surface; a first conductive layer extending over at least a portion of the first die surface and over at least a portion of the first encapsulant surface, and electrically connected to the bond pad and a first end of the conductive via; a second conductive layer extending over at least a portion of the second encapsulant surface, and electrically connected to a second end of the conductive via; and an electrical interconnection structure coupled to the second conductive layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. A semiconductor device comprising:
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a semiconductor die comprising a first die surface, a second die surface opposite the first die surface, and side die surfaces connecting the first and second die surfaces, where the first die surface comprises a bond pad, and wherein the semiconductor die is rectangular shaped with a first and second of the side die surfaces longer than a third and fourth of the side die surfaces; an encapsulant covering at least one of the side die surfaces and comprising a first encapsulant surface and a second encapsulant surface opposite the first encapsulant surface; a conductive via passing through at least the encapsulant between the first encapsulant surface and the second encapsulant surface; a first conductive layer extending over at least a portion of the first die surface and over at least a portion of the first encapsulant surface, and electrically connected to the bond pad and a first end of the conductive via; a second conductive layer extending over at least a portion of the second encapsulant surface, and electrically connected to a second end of the conductive via; an electrical interconnection structure coupled to the second conductive layer; and a first conductive trace, wherein; the first conductive trace runs in a plane that is parallel to the first die surface and separated from the first die surface; and the first conductive trace runs alongside the first side die surface along at least most of the length of the first side die surface. - View Dependent Claims (31, 32, 33, 34, 35)
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36. A semiconductor device comprising:
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a semiconductor die comprising a first die surface, a second die surface opposite the first die surface, and side die surfaces connecting the first and second die surfaces, where the first die surface comprises a bond pad; an encapsulant covering at least one of the side die surfaces and comprising a first encapsulant surface and a second encapsulant surface opposite the first encapsulant surface; a conductive via passing through at least the encapsulant between the first encapsulant surface and the second encapsulant surface; a first conductive layer extending over at least a portion of the first die surface and over at least a portion of the first encapsulant surface, and electrically connected to the bond pad and a first end of the conductive via; a dielectric layer that completely covers at least a side of the first conductive layer facing away from the semiconductor die; a second conductive layer extending over at least a portion of the second encapsulant surface, and electrically connected to a second end of the conductive via; and an electrical interconnection structure coupled to the second conductive layer. - View Dependent Claims (37, 38, 39, 40)
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Specification